Design of a LNA for ULF wireless communication

Zhang Mengwen,Jin Yufeng
DOI: https://doi.org/10.16157/j.issn.0258-7998.200825
2021-01-01
Abstract:This paper introduces the design of low noise amplifier, using for ultra-low frequency. There′s a new loop in the paper, formed by a low-pass transconductance and a self-cascode MOSFET, proposed to stabilize the output bias voltage of the amplifier. By using the loop with the constant transconductance bias circuit, the open-loop gain of the amplifier is constant at about 40 dB. It does not vary with the supply voltage, process and temperature. In the amplifier, a self-cascode MOSFET is used as a gain unit to enable the amplifier output range to reach rail to rail, with the use of full differential current bias. This amplifier has a remarkable in-band high-power supply rejection ratio, up to 101.4 dB. The power ripple has almost no effect on the output signal, when the wearable devices are powered by high impedance sources.
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