Abstract:We established a strong correlation between the crystal lattice disorder in Fe doped ZnO (Fe x Zn 1-x O) thin films and its effect on the electron phonon (e-p) coupling strength (I 2LO /I 1LO ) which decreased with Fe doping concentration, improved with annealing temperature and showed a mixed increasing/decreasing trend by the variation of the argon (Ar) to oxygen (O 2 ) gas ratio (Ar + O 2 , Ar) in the deposition chamber. Fe doping raised the number of phonon modes, intensity and full width at half maximum (FWHM) of the 1LO phonon modes suggesting the confinement of phonons due to the increased crystal lattice disorder in the Fe x Zn 1-x O films. High temperature annealing enhanced the e-p coupling strength reaching a maximum at 500 °C indicating better crystal quality at high temperature. Furthermore, the e-p coupling strength dropped with the doping concentration for the films prepared in Ar + O 2 atmosphere and that showed a mixed increasing/decreasing trend for films prepared in Ar atmosphere. This unique physical phenomena confirmed that the coupling strength not only depend on the dopant concentration but also the dopant induced micro/nano defects that modulate the crystal lattice disorder and the coupling strength in doped ZnO. The as prepared Fe x Zn 1-x O thin films were highly oriented along c-axis displaying columnar nanorod (film) like morphology at low (high) Fe doping concentration with the co-existence of both Fe 2+ and Fe 3+ ions. Fe doping increased the band gap from 3.28 eV for un-doped ZnO to 3.35 eV (1.40 at.% of Fe) and 3.42 eV (3.5 at.% of Fe). Nearly forty (40) thin films were used for a detailed investigation.

Large Linear Electrostrain of Acceptor-Donor Co-doped ZnO Films

High-Concentration F-Incorporated Zno Thin Films Doped Via Femtosecond-Laser Hyperdoping

Enhanced Electromechanical Response of Fe-doped ZnO Films by Modulating the Chemical State and Ionic Size of the Fe Dopant

Interplay Between Chemical State, Electric Properties, and Ferromagnetism in Fe-doped ZnO Films

Defect induced crystal lattice disorder and its effect on the electron-phonon coupling in Fe doped ZnO thin films

Lithiation of ZnO Nanowires Studied by In-Situ Transmission Electron Microscopy and Theoretical Analysis

Fabrication of Lithium-Doped Zinc Oxide Film by Anodic Oxidation and Its Ferroelectric Behavior

Fabrication and Properties of Li-doped ZnCoO Diluted Magnetic Semiconductor Thin Films

Strain-induced Ferromagnetism Enhancement in Co:ZnO Films

Mg doping effects on the microstructure and piezoelectric characteristics of ZnO:Li films deposited at room temperature using an RF sputtering deposition method

Electric and Magnetic Behaviors of Li and Co Codoped ZnO Thin Film on Si (100) Substrate

A Highly Strained Phase in PbZr0.2Ti0.8O3 Films with Enhanced Ferroelectric Properties

High Electrostrictive Strain Induced by Defect Dipoles in Acceptor-Doped (K0.5na0.5)nbo3ceramics

Effect of Donor Doping on the Magnetic Properties of Co-doped ZnO Films

Highly Conductive Thin Films of Nonmetal F and B Co-Doped ZnO on Flexible Substrates: Experiment and First-Principles Calculations

Room-temperature ferromagnetic and ferroelectric behavior in polycrystalline ZnO-based thin films

A Highly Strained Phase in PbZr 0.2 Ti 0.8 O 3 Films with Enhanced Ferroelectric Properties

The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

Electrochemistry Induced Giant and Reversible Deformation in Oxides

Structural and Magnetic Properties of Co-doped ZnO Thin Films

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor