High Electrostrictive Strain Induced by Defect Dipoles in Acceptor-Doped (K0.5na0.5)nbo3ceramics

Ye-Jing Dai,Yong-Jie Zhao,Zhe Zhao,Zhi-Hao Zhao,Qi-Wu Zhou,Xiao-Wen Zhang
DOI: https://doi.org/10.1088/0022-3727/49/27/275303
2016-01-01
Abstract:Acceptor doping is an efficient method to improve ferroelectric material performance through the formation of defect dipoles. Here, a high electrostrictive strain of 0.16-0.19%, and large d(33)* of >300 pm V-1 are obtained in CuO-doped (K0.5Na0.5)NbO3 ceramics. We analyzed the orientation relationship and the interaction between defect dipole polarization (P-d) along < 001 > orientation and spontaneous polarization (P-s) parallel to < 110 > in orthorhombic (K0.5Na0.5)NbO3. Thus, a 'coupling effect' mechanism was suggested to explain how the P-d and P-s can work together to contribute to the electrostrictive strains in this lead-free piezoelectric ceramic.
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