Abstract:Silicon (Si) power devices have dominated the world of Power Electronics in the last years, and they have proven to be efficient in a wide range of applications. But high power, high frequency and high temperature applications require more than Si can deliver. Wide Band-Gap (WBG) materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) were intensively researched and developed for power applications due to the substantial advantages their inherent material properties could realize at device level. The SiC-MOSFET has unique capabilities that make it a superior switch when compared to its silicon counterparts. By nature of its material advantages, SiC MOSFETs provide lower switching loss, lower ON-resistance across its operating temperature range, and superior thermal properties. However the characteristics of SiC devices require consideration of the gate-driver circuit to optimize the switching performance. SiC-MOSFETs, due to their ultra fast switching speed, are susceptible to have harsh transients introduced by rapid change in the drain-to-source voltage. Therefore, the gate drive requirements of SiC-MOSFETs require a thorough analysis in order to prevent high dv/dt transients from causing erratic switching behavior or unnecessary switching loss. This paper provides a general review on the properties of SiC comparing some performances between Si-MOSFETs and SiC-MOSFETs for typical power electronics applications. The main constraints and issues of the SiC-MOSFET switching process are presented, and some recent proposed Gate Drivers to solve these constraints are presented throughout this work.

Design Techniques of Gate Driver for SiC MOSFET's Applications.

Dynamic Performance of 6.5kv/400a SiC MOSFET Module and Its Gate Driver

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

SiC MOSFET Driver and Experiment Analysis

Review on SiC-MOSFET devices and associated gate drivers

A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module

An Active Gate Driver Design to Reduce Voltage and Current Overshoots for SiC MOSFET Modules

An Active Gate Driver for Suppressing the Current Oscillation of SiC MOSFET

A High Temperature Gate Drive Circuit for SiC MOSFET

Gate Driver Design for SiC Power MOSFETs with a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

Advanced gate driving concepts and switching optimization for SiC semiconductors

An Active Gate Driver for Dynamic Current Sharing of Paralleled SiC MOSFETs

Analysis for Crosstalk of SiC-MOSFET in a Bridge Circuit and Its Active-Clamped Driver Based Suppression Methods

Comparison of Two Gate Drivers for SiC MOSFETs on Switching Performance and over Current Protection

Analysis and Suppression for Gate Oscillation Caused by Body Diodes on Paralleled SiC MOSFETs Application

Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs

Challenges in SiC power MOSFET design

An Active Gate Driver for Improving Switching Performance of SiC MOSFET

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET