Abstract:The seamless integration of two-dimensional (2D) ferromagnetic materials with similar or dissimilar materials can widen the scope of low-power spintronics. In this regard, a vertical van der Waals (vdW) heterostructure of 2D ferromagnets with semiconducting transition metal dichalcogenides (TMDCs) forms magnetic junctions with exceptional stability and electrical control. Interestingly, 2D metallic Fe3GeTe2 (FGT) reveals above room temperature Curie temperatures and has large magneto anisotropy due to spin-orbit coupling. In addition, it also possesses topological states and a large Berry curvature. Herein, we designed the FGT/WSe2/FGT vdW heterostructure with a uniform and sharp interface so that FGT could maintain its inherent electronic properties. Also, the uniform thickness of the barrier provides a smooth flow of spins through the junctions as tunneling exponentially decays with an increasing barrier thickness. However, strong energy-dependent spin polarization is crucial for achieving optimum spin valve properties, such as large tunneling magnetoresistance (TMR) along with the manipulation of the magnitude and sign reversal. We have observed a shifting of high-energy localized minority spin states toward low-energy regions, which causes spin polarization fluctuation between -42.5% and 41% over a wide range of bias voltage. This leads to a negative TMR% of ∼-100% at 0.1 V Å-1 and also a large positive TMR% at 0.2 V Å-1 and -0.4 V Å-1. Besides, the system exhibits a highly tunable large anomalous Hall conductivity (AHC) of 626 S cm-1. Interestingly, such unprecedented electronic behaviour with large and switchable spin polarization, anomalous Hall conductivity and TMR can be incorporated into MTJ devices, which provide electrical control and long-range spin transport. Additionally, the system emerges as a standout candidate in low-power spintronic devices (e.g., MRAM and magnetic sensors) owing to its distinctive energy-dependent electronic structure with a wide range of external bias.

Efficient Spin Injection in Fe3GeTe2/h-BN/graphene Heterostructure

Spin Valve Effect in the Van Der Waals Heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Efficient spin filtering through Fe GeTe -based van der Waals heterostructures

Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6

Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes

Efficient Spin Transfer in WTe2/Fe3GeTe2 van der Waals Heterostructure Enabled by Direct Interlayer p-Orbital Hybridization

Tunable long-range spin transport in a van der Waals Fe3GeTe2/WSe2/Fe3GeTe2 spin valve

Highly Efficient Spin Injection and Readout Across Van Der Waals Interface.

Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures

A Room-Temperature Spin-Valve with van der Waals Ferromagnet Fe5 GeTe2 /Graphene Heterostructure

Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 Van Der Waals Heterostructures.

2D spin transport through graphene-MnBi2Te4heterojunction

Half-metallic transport and spin-polarized tunneling through the van der Waals ferromagnet Fe${_4}$GeTe$_{2}$

Exchange bias and spin–orbit torque in the Fe 3 GeTe 2 -based heterostructures prepared by vacuum exfoliation approach

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch

Highly efficient spin field-effect transistor based on nanographene and hBN heterostructures: spintronic and quantum transport properties

Spin current generation by thermal gradient in graphene/h-BN/graphene lateral heterojunctions

Gate-tunable High Magnetoresistance in Monolayer Fe3GeTe2 Spin Valves.

Tuning Spin Hall Conductivity in GeTe by Ferroelectric Polarization