Preparation Of Tio2@C-F Flexible Memristor Crossbars Via Sol-Gel Method

Chen Xiao-Ping,Hu Si-Min,Hu Hai-Long,Yue Jiang-Ling,Kuang Zhen-Jie,Huang Xiao-Zhong
DOI: https://doi.org/10.11862/CJIC.2020.246
2020-01-01
Chinese journal of inorganic chemistry
Abstract:Carbon fiber was used as the flexible substrate and electrode material, and the TiO2 resistive active layer was plated by the sol-gel method, and then the flexible fiber memristor (TiO2@C-f) was prepared by the "ten" overlapping. The structure was characterized by X-ray diffraction, scanning electron microscope and X-ray photoelectron spectroscopy and memristance characteristic and resistance change mechanism were studied. The results show that the TiO2 coating on the carbon fiber has an anatase crystal structure, and the concentration of oxygen vacancies was about 19.5%. The prepared TiO2@C-f flexible memristor was a mutant memristor and it has a high -low resistance state switch ratio up to 10(4). When performing the fatigue resistance test, the high-low resistance state switch ratio of the memristive device is stable at about two orders of magnitude. For both high resistance state and low resistance state, the carrier transport mechanism is dominated by ohmic conduction, where the resistance state transition is related to the formation and breakage of oxygen vacant conductive filaments. This memristor can sustain flexible bending deformation to a certain extent, either knitting or wearing.
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