Paper based flexible MoS2-CNT hybrid memristors

B Raju Naik,Nitika Arya,Viswanath Balakrishnan,B. Raju Naik
DOI: https://doi.org/10.1088/1361-6528/ad2a01
IF: 3.5
2024-02-18
Nanotechnology
Abstract:We report MoS2/CNT hybrid nanostructures for memristor applications on flexible and bio-degradable cellulose paper. In our approach, we varied two different weight percentages (10% and 20%) of CNTs in MoS2 to improve the MoS2 conductivity and investigate the memristor device characteristics. The device with 10% CNT shows low VSET voltage of 2.5 V, which is comparably small for planar devices geometries. The device exhibits a long data retention time and cyclic current-voltage stability of ~105 sec and 102 cycles, making them a potential candidate in flexible painted electronics. Along with good electrical performance, it also shows high mechanical stability for 1000 bending cycles. The conduction mechanism in the MoS2-CNT hybrid structure is corroborated with percolation theory and defect-induced filament formation. Further, such flexible and biodegradable cellulose-based paper electronics may pave the way to address the issue of environmental pollution caused by electronic waste in the near future.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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