Abstract:The electronics market is highly competitive and driven by consumers desire for the latest and most sophisticated devices at the lowest cost. In the last decade there has been increasing interest in printing electronic materials on lightweight and flexible substrates such as plastics and fabrics. This not only lowers fabrication and capital costs but also facilitates many new applications, such as flexible displays and wearable electronics. The printing of computer memory is also desirable since many of these applications require memory to store and process information. In addition, there is now an international effort to develop new types of computer memory that consume ultra-low levels of power. This is not only to lower energy usage worldwide, which is important for reducing CO2 emissions, but it also enables a longer period between the re-charging of devices such as mobile phones, music players and fitness bands. Memory that is non-volatile is an obvious choice since it doesn't consume power to retain information like conventional SRAM and DRAM. Memristors (or memory resistor) are a new type of memory that are intrinsically non-volatile in nature. Their simple two-terminal architecture, easy method of fabrication and low power consumption means they have received much attention from both the research community and industry. Devices with the lowest fabrication costs are made from organic or hybrid (organic-inorganic) composite materials because of the ability to use low-cost solution processing methods with the advantages of large area deposition under vacuum-free and room temperature ambient conditions. Memristors have excellent device properties, including a large resistance Off/On ratio (up to 5 orders of magnitude), fast switching speeds (less than 15 ns), long endurance (over 1012 cycles), long data storage retention time (~10 years) and high scalability down to nanoscale dimensions. In this article we review progress in the field of printed and flexible memristor devices and discuss their potential across a wide range of applications.

Fully Printed Memristors Made with MoS2 and Graphene Water-Based Inks

Inkjet-Printed High-Yield, Reconfigurable, and Recyclable Memristors on Paper

Inkjet Printed Metal–Organic Frameworks for Non‐Volatile Memory Devices Suitable for Printed RRAM

Inkjet‐Printed Tungsten Oxide Memristor Displaying Non‐Volatile Memory and Neuromorphic Properties

Inkjet printed IGZO memristors with volatile and non-volatile switching

Fabricating Molybdenum Disulfide Memristors

Printed and Flexible Organic and Inorganic Memristor Devices for Non-volatile Memory Applications

Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors

Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applications (Adv. Electron. Mater. 10/2024)

All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO2 Nanoparticle Thin Films

A Fully Printed ZnO Memristor Synaptic Array for Neuromorphic Computing Application

Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications.

Inkjet-printed h-BN memristors for hardware security

MoS2 Nanosheets Functionalized with Ferrocene-Containing Polymer Via SI-ATRP for Memristive Devices with Multilevel Resistive Switching

Large-Area MoS2 via Colloidal Nanosheet Ink for Integrated Memtransistor

Resistive Switching Memories In Mos2 Nanosphere Assemblies

Large-Scale and Robust Multifunctional Vertically-Aligned MoS$_2$ Photo-Memristors

Squeeze-Printing Ultrathin 2D Gallium Oxide out of Liquid Metal for Forming-Free Neuromorphic Memristors

Fully printed IGZO memristor arrays with robust threshold switching characteristics for artificial nociceptors

Electrohydrodynamically Printed Flexible Organic Memristor for Leaky Integrate and Fire Neuron

Memristors with Monolayer Graphene Electrodes Grown Directly on Sapphire Wafers