Abstract:A new sulfurization configuration is elaborated, and suitable parameters are explored for the preparation of Cu2CdSnS4 thin films. Appropriate copper content can reduce the fluctuations of bandgap and electrostatic potential in Cu2CdSnS4 thin film. The best efficiency of Cu2CdSnS4 thin film solar cell can be found over 10% efficient under the ratio of 0.83 and 590 °C sulfurization temperature. At present, Kesterite‐based thin‐film solar cells, such as Cu2ZnSnS4 solar cells, involve serious band‐tailed states, which leads to low open‐circuit voltage, thereby hindering the further improvement of device performance. In stannite‐based materials, such as Cu2CdSnS4, the substitution of Zn with Cd can effectively suppress CuCd‐related point defects and defect clusters; thus, the band‐tailing state is few, which has attracted considerable research attention. In this work, on the basis of using optimized sulfurization and optimizing ratios (Cu/Cd+Sn) and temperatures, Cu2CdSnS4 thin films can be obtained with good quality and single‐phase composition, in which the device prepared at a ratio of 0.83 and 590 °C has the highest efficiency. Defect analysis shows that the substitution of Zn with Cd can effectively reduce CuCd‐related defects and defect clusters (such as 2CuCd+SnCd) and also decrease Urbach energy, fluctuations of bandgap, and electrostatic potential compared with kesterite‐based devices. In particular, Cu2CdSnS4 thin‐film solar cell prepared under optimized conditions (the ratio of 0.83 and 590 °C) has the minimum reverse saturation current, red shift, and the maximum minority carrier diffusion length. Therefore, an efficiency over 10% Cu2CdSnS4 thin‐film solar cell is reported, which shows the highest efficiency among stannite‐based solar cells to date.

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