Abstract:Zintl phase Mg3X2 (X=Sb, Bi) based thermoelectric materials have attracted much attention because of their non-toxic, low cost and high performance. Compared with polycrystalline materials, the Mg3X2 crystals are of great value in revealing material's intrinsic and anisotropic thermoelectric properties, as well as providing effective strategies for enhancing electrical and thermal transport properties. Therefore, the recent progress of single crystal growth and thermoelectric properties for Mg3X2 crystals are systematically summarizes in this paper. Due to the volatility and causticity of Mg element, several different methods such as slow cooling method, directional solidification method, flux method, and flux Bridgman method are widely used for synthesizing Mg3X2 crystals, in which the flux Bridgman method is more competitive to prepare large size bulk crystals. Researchers found that both n-type and p-type Mg3Sb2 crystals show an anisotropy thermoelectric transport property. The crystal growth rate, the concentration of self-doped Mg element, the concentration of impurity doping or alloying elements have a great impact on both electrical and thermal transport properties for Mg3Sb2 crystals. So far, the p-type and n-type Mg3Sb2 crystals with ZT value of 0.68 and 0.82 are achieved, respectively. This paper reviews the recent progress of growth and thermoelectrics properties of Zintl phase Mg3X2-based crystals, revealing that the flux Bridgman method is the most effective method to produce large-sized Mg3X2-based crystals. Tuning chemical composition of Mg3X2-based crystal by doping and forming solid solution for optimal carrier concentration and band structure engineering is expected to further improve the thermoelectric performance of Mg3X2-based crystal. The above-mentioned growth method and research strategies provide a significant guidance for the in-depth understanding of the Mg3X2-based crystal in the future.

Nearly isotropic transport properties in anisotropically structured n-type single-crystalline Mg<sub>3</sub>Sb<sub>2</sub>

High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Growth and transport properties of Mg3X2 (X = Sb, Bi) single crystals

Electronic structure and transport property of p-type Mg3Sb2 from first-principles study

Metallic N-Type Mg3 Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance.

High-Performance Mg<sub>3</sub>Sb<sub>2-<i>x</i></sub>Bi<i><sub>x</sub></i> Thermoelectrics: Progress and Perspective

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Compromise between band structure and phonon scattering in efficient n-Mg3Sb2-Bi thermoelectrics

Understanding Anisotropy and Its Relations with Sintering Conditions on Thermoelectric Transport Properties of n-Type Mg 3 Sb 2 -Based Materials

Understanding the High Thermoelectric Performance of Mg3Sb2‐Mg3Bi2 Alloys

Crystal Growth and Thermoelectric Properties of Zintl Phase Mg3X2 (x=sb, Bi) Based Materials: a Review

Enhanced Thermoelectric Performance of p‐Type Mg3Sb2 for Reliable and Low‐Cost all‐Mg3Sb2‐Based Thermoelectric Low‐Grade Heat Recovery

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Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Realizing Excellent Structural and Thermoelectric Performance in Mg 3 Sb 2 -Based Alloys by Manipulating Mg Intrinsic Migration Kinetics with Interstitial Ni Doping

High-Performance Mg3Sb2-xBix Thermoelectrics: Progress and Perspective

Novel Insights into Lattice Thermal Transport in Nanocrystalline Mg3Sb2 from First Principles: the Crucial Role of Higher-Order Phonon Scattering

Improved figure of merit (z) at low temperatures for superior thermoelectric cooling in Mg3(Bi,Sb)2

Inhibiting Mg Diffusion and Evaporation by Forming Mg‐Rich Reservoir at Grain Boundaries Improves the Thermal Stability of N‐Type Mg3Sb2 Thermoelectrics

Realizing high thermoelectric performance in p-type CaZn2Sb2-alloyed Mg3Sb2-based materials via band and point defect engineering