Abstract:Copper Zinc Tin Sulfide (Cu2ZnSnS4 or CZTS) is gaining much attention recently as a potential light absorber alternative to CuInGaSe2 due to its suitable energy band gap ∼1.5 eV with p-type conductivity, high optical absorption coefficient of ∼105 cm−1. Moreover, all its constituents are abundant in the crust of the earth and environmentally harmless. In the present investigation, CZTS thin films were prepared using simple two step process of, sulfurization of sequentially sputtered stack, Glass/Zn/Sn/Cu (hereafter CTZ) metallic precursors on soda lime glass substrate held at temperature 200 °C. The sputter power was optimized individually for Zn, Sn, and Cu layers. The sputtered CTZ precursors were annealed at different temperatures in the range, 300–550 °C with an increment of 50 °C for 2 h in the ambience of vaporized elemental sulfur. The XRD pattern revealed that the films sulfurized in the temperature range 300–400 °C showed various spurious (binary and ternary) phases and the films sulfurized at 450 °C exhibited a clear phase corresponding to CZTS that becomes predominant at 500 °C. The optimized (500 °C) CZTS thin films showed kesterite structure with (112) preferred orientation. The sharp Raman shift centered at 336 cm−1 confirms the single phase CZTS for the precursors sulfurized at 500 °C. From the transmittance measurements, the energy gap is found to be 1.62 eV for optimized CZTS films. The optical profilometer studies indicated an increase in the surface roughness with the sulfurization temperature. AFM measurements revealed compact morphology with pyramidal texture.

Effect of Sulfurization Time on the Physical Properties of Tin (II) Monosulfide Thin Films

X-Ray Photoelectron Spectroscopy and X-Ray Diffraction Studies on Tin Sulfide Films Grown by Sulfurization Process

Effect of sulfurization time on the properties of copper zinc tin sulfide thin films grown by electrochemical deposition

Properties of Tin Monosulphide Films Grown by Chemical Bath Deposition

Physical Properties of Cu2SnS3 Thin Films Prepared by Sulfurization of Co-Sputtered Cu-Sn Metallic Precursors

The Influence of Sulfurization Time and H2S Concentration on the Properties of Cu2ZnSnS4 Thin Films

Effect of Sulfurization Temperature on the Efficiency of SnS Solar Cells Fabricated by Sulfurization of Sputtered Tin Precursor Layers Using Effusion Cell Evaporation

The Effect of Substrate Surface on the Physical Properties of SnS Films

[Study of the Physical Properties of SnS Thin Films Deposited by Ultrasonic Spray Pyrolysis Method].

Effect of Thioacetamide Concentration on the Preparation of Single-Phase SnS and SnS2 Thin Films for Optoelectronic Applications

Sulfurization Effect on Optical Properties of Cu2SNS3 Thin Films Grown by Two-Stage Process

Influence of Different Substrates on the Properties of Sulfurized Sns Films

Influence of Sulfurization Temperature on Physical Properties of Cu2znsns4 Thin Films

Crystalline Behaviour of Sns Layers Produced by Sulfurization of Sn Films Using H2s

Development of Sulphurized SnS Thin Film Solar Cells

Tin Sulphide Thin Films Synthesised Using a Two Step Process

Effect of Organic Solvent on the Physical Properties of Spin-Coated Tin Sulfide Thin Films

Synthesis and characterisation of co-evaporated tin sulphide thin films

Sulfurization Temperature Dependent Physical Properties of Cu2SnS3 Films Grown by a Two-Stage Process

Structural, Optical, and Electro-Optical Properties of Thermally Evaporated Tin Sulphide Layers

The Effect of Selenization Temperature on Morphological and Structural Properties of Tin Diselenide Thin Films Grown by a Two-Stage Process