Crystalline Behaviour of Sns Layers Produced by Sulfurization of Sn Films Using H2s

K. T. R. Reddy,M. V. Reddy,M. Leach,J. K. Tan,D. Y. Jang,R. W. Miles
DOI: https://doi.org/10.1063/1.4710200
2012-01-01
AIP Conference Proceedings
Abstract:Tin sulfide (SnS) is receiving increasing interest for its potential application as an absorber layer in thin film solar cells. In this work, a novel method for the formation of SnS layers on soda-lime glass substrates was investigated. The layers were formed by first sputtering tin onto glass followed by annealing in a 5% H2S and Ar gas environment over the temperature range of 300-450 degrees C for 2 hours. The structural properties of the layers synthesized, including the crystal structure, phases present, crystallite size, strain and dislocation density are reported.
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