Abstract:Metal chalcogenide thin films have a wide variety of applications and potential uses. Tin(II) sulfide is one such material which presents a significant challenge with the need for high quality SnS, free of oxide materials (e.g., SnO2) and higher tin sulfides (e.g., Sn2S3 and SnS2). This problem is compounded further when the target material exhibits a number of polymorphic forms with different optoelectronic properties. Unlike conventional chemical vapor deposition (CVD) and atomic layer deposition (ALD), which rely heavily on having precursors that are volatile, stable, and reactive, the use of aerosol assisted CVD (AA-CVD) negates the need for volatile precursors. We report here, for the first time, the novel and structurally characterized single source precursor (1), (dimethylamido)(N-phenyl-N′,N′-dimethylthiouriate)tin(II) dimer, and its application in the deposition, by AA-CVD, of phase-pure films of SnS. A mechanism for the oxidatively controlled formation of SnS from precursor 1 is also reported. Significantly, thermal control of the deposition process allows for the unprecedented selective and exclusive formation of either orthorhombic-SnS (α-SnS) or zinc blende-SnS (ZB-SnS) polymorphs. Thin films of α-SnS or ZB-SnS have been deposited onto Mo, fluorine doped tin oxide (FTO), Si, and glass substrates at the optimized deposition temperatures of 375 and 300 °C, respectively. The densely packed polycrystalline thin films have been characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy analysis. These data confirmed the phase purity of the SnS formed. Optical analysis of the α-SnS and ZB-SnS films shows distinctly different optical properties with direct band gaps of 1.34 and 1.78 eV, respectively. Furthermore, photoelectrochemical and external quantum efficiency (EQE) measurements were undertaken to assess the optoelectronic properties of the deposited samples. We also report for the first time the ambipolar properties of the ZB-SnS phase.

A hexane solution deposition of SnS2 films from tetrabutyltin via a solvothermal route at moderate temperature

Electrodeposition of Sno2 Thin Films from Aqueous Tin Sulfate Solutions

Two-dimensional SnS nanosheets fabricated by a novel hydrothermal method

The Synthesis of SnS2 Nanoflakes from Tetrabutyltin Precursor

[Study of the Physical Properties of SnS Thin Films Deposited by Ultrasonic Spray Pyrolysis Method].

OPTICAL AND ELECTRICAL PROPERTIES OF SnO2:Sb THIN FILMS DEPOSITED BY SOL-GEL PROCESS

Polymorph-Selective Deposition of High Purity SnS Thin Films from a Single Source Precursor

Synthesis of SnS2 nanocrystals via a solvothermal process

Chemical Bath Deposition of Single Crystal SnS Nanobelts on Glass Substrates

Effect of Organic Solvent on the Physical Properties of Spin-Coated Tin Sulfide Thin Films

Atomic layer deposition of SnS2 film on a precursor pre-treated substrate

Enhanced Thermoelectric Performance of Tin(II) Sulfide Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition

Hydrothermal Synthesis and Characterization of Novel Aloe-Like SnS2 Nanostructures

Formation of Cu2SnS3 thin film by the heat treatment of electrodeposited SnS–Cu layers

Hydrothermal synthesis, characterization and properties of SnS nanoflowers

Fabrication of layered nanocrystallites SnS and β-SnS2 via a mild solution route

Synthesis, Growth and Characterization of Cu2CoSnS4 Thin Films via Thermal Evaporation Method

Vapor Phase Synthesis of SnS Facilitated by Ligand-Driven “Launch Vehicle” Effect in Tin Precursors

Facile Synthesis of Tin Monosulfide Nanosheets Via Physical Vapour Deposition and Their Near-Infrared Photoresponse

Effect of hydrogen sulfide concentration on two-dimensional SnS2film by atomic layer deposition in annealing process

Solvent–thermal preparation of nanocrystalline tin chalcogenide