Abstract:Functional single‐crystalline films with mechanical flexibility have attracted intensive interest due to excellent material quality and the wide applications in flexible electronics. However, the free‐standing single‐crystalline films with the thickness in sub‐micrometer range usually deform due to insufficient mechanical strength or internal stress. This study introduces a strain balanced model (SBM) of a sandwich structure and an ion slicing‐based strain compensation bonding method for fabricating ultrathin but self‐supporting single‐crystalline thin films. Based on the SBM and the strain compensation bonding method, a centimeter‐scale strain balanced LiNbO3 (LN) thin film (SB‐LNTF) consisting of two pieces of 550 nm single‐crystalline LN film and an intermediate layer of benzocyclobutene is successfully fabricated. In additional to flat, bendable, transparent, and lightweight, the fabricated ultrathin (<10 µm) SB‐LNTF also exhibits excellent self‐supporting property. Standard piezoresponse force microscopy amplitude butterfly curve and a 180° phase switching associated with ferroelectric behavior of LN film are observed, which confirm its high crystal quality of the ion sliced LiNbO3 thin film. A flexible acoustic resonator demonstrated on SB‐LNTF shows strong resonances. In principle, the strain compensation bonding method is also applicable to epitaxial lift‐off films. A strain‐balanced model of a sandwich structure and a strain compensation bonding method for fabricating ultrathin but self‐supporting films is introduced. A centimeter‐scale strain‐balanced film (<10 µm) consisting of two single‐crystalline LiNbO3 thin films and an intermediate layer of benzocyclobutene is demonstrated, which exhibits excellent properties of flat, bendable, transparent, lightweight, and self‐supporting.

Resistive Switching Effects of Crystal-Ion-Slicing Fabricated LiNbO<sub>3</sub> Single Crystalline Thin Film on Flexible Polyimide Substrate

Engineering of Self-Rectifying Filamentary Resistive Switching in LiNbO3 Single Crystalline Thin Film Via Strain Doping

Reliable resistive switching and synaptic plasticity in Ar+-irradiated single-crystalline LiNbO3 memristor

Resistive switching properties in polycrystalline LiNbO3 thin films

Nanocrystalline Si Pathway Induced Unipolar Resistive Switching Behavior from Annealed Si-rich SiNx/SiNy Multilayers

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

A multilevel resistive switching memristor based on flexible organic-inorganic hybrid film with recognition function

Analog-type resistive switching behavior of Au/HfO2/ZnO memristor fabricated on flexible Mica substrate

The fabrication of LiNbO3 memristors for electronic synapses using oxygen annealing

Optimum resistive switching characteristics of NiFe2O4 by controlling film thickness

1T MoS2/CoS2 Heterostructures Enabling Enhanced Resistive Switching Behavior in Sodium Alginate-based Flexible Memristors

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

Flexible memristors with low-operation voltage and high bending stability based on Cu2AgBiI6 perovskite

Visible-light irradiation improved resistive switching characteristics of a 2D Cs2Pb(SCN)2I2-Based memristor device

The filaments control for tunning digital resistive switching in data storage application and analog behavior as an artificial synapse with CsPbBr3-based memristor

Strain Balanced Self‐Supporting Single‐Crystalline LiNbO 3 Thin Films for Flexible Electronics

High performance, electroforming-free, thin film memristors using ionic Na 0.5 Bi 0.5 TiO 3

High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching

Laser-induced graphene-based miniaturized, flexible, non-volatile resistive switching memory devices

Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials

Nanoscale-Thick La 0.7 Sr 0.3 MnO 3 Films for Memristor Devices with Negative Differential Resistance-Coupled Resistive Switching Behavior