Abstract:This work demonstrates high-performance AlN/GaN double-barrier resonant tunneling diodes (RTDs) with high peak current density grown by plasma-assisted molecular beam epitaxy on c-plane free-standing GaN substrates, featuring stable and repeatable negative differential resistance (NDR) characteristics at room temperature. By scaling down the barrier thickness of AlN barrier and the lateral mesa size of collector, the record peak current density of 1551 kA/cm2 is achieved along with a peak-to-valley current ratio (PVCR) of 1.24, which is attributed to the reduced resonant tunneling time under thinner AlN barrier and the suppressed external incoherent valley current by reducing the dislocation number contained in the RTD device with the smaller size of collector. By statistically analyzing the NDR performance of RTD devices with different thicknesses of AlN barrier, the average peak current density increases from 145.7 to 1215.1 kA/cm2, while the average PVCR decreases from 1.45 to 1.1, correspondingly, accompanying with a decreased peak voltage from 6.89 to 5.49 V, with downscaling the AlN barrier thickness from 1.5 to 1.25 nm. The peak current density obtained in this work is the highest value among all the reported nitride-based RTDs up until now while maintaining high PVCR value simultaneously, which illustrates that ultra-scaled RTD based on vertical quantum-well structure and lateral collector size is a valuable approach for the development of nitride-based RTDs with excellent NDR characteristics and reveals their great potential applications in high-frequency oscillation sources and high-speed switch circuits.

Bidirectional Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Freestanding GaN

Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire

Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon

Repeatable Asymmetric Resonant Tunneling in AlGaN/GaN Double Barrier Structures Grown on Sapphire

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Comparison of Resonant Tunneling Diodes Grown on Freestanding GaN Substrates and Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy

Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation

Negative Differential Resistance in the I–V Curves of Al2O3/AlGaN/GaN MIS Structures

Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

Deep-Level Defects Induced Degradation of Negative Differential Resistance in GaN-Based Resonant Tunneling Diodes

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Negative Differential Resistances in Graphene Double Barrier Resonant Tunneling Diodes

Negative Differential Resistance in AlGaAs/GaAs Heterostructures

Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures

Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes

High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

Numerical Simulation of Negative Differential Resistance Characteristics in Si/Si1- χGeχRTD at Room Temperature

Three-terminal graphene negative differential resistance devices.

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition