Abstract:Negative differential resistance (NDR) characteris- tics in the current-voltage curve of a p-type Si/Si1¡xGex resonant tunnelling diode (RTD) are simulated with the quantum hydrody- namic (QHD) model. An integrated difference scheme including Schafetter-Gummel (SG) method, second upwind method and second-order central difference method is used to discretize the QHD equations, which maintains both accuracy and stability. This work is the first to simulate hole transport in RTD using the QHD model. Investigations of some structure modifications have been carried out. Analysis of the results indicates that both quantum barrier thickness and hole effective mass have an impact on NDR characteristics for Si/Si1¡xGex RTD. The simulated peak-to-valley current ratio (PVCR) of 1.14 at T=293K agrees quantitatively with the experimental result when x=0.23. I. INTRODUCTION Circuits that use RTD hold promise as a technology for ul- tradense high-speed integrated digital devices. The NDR in I-V characteristic in RTD can be used to reduce the device counts per circuit function, thus increasing the circuit integration density (1). Many researches have been done on AlGaAs RTD and NDR characteristics are observed at room temperature. However, RTD based on SiGe can be made more easily than AlGaAs RTD, and it also has a good compatibility with the conventional CMOS processing technology. Simulation for a p-type double-barrier Si/Si1¡xGex RTD is performed in this paper, and an analysis on NDR is also included. For the modeling of ultra-small semiconductor devices, the QHD model was proposed by C. L. Gardner (2) from a moment expansion of the Wigner function. This model is a quantum corrected version of the classical hydrodynamic model, with O("h2) corrections to the stress tensor and energy density terms. This model has the advantages that it is com- putationally less expensive and expressed in terms of intuitive macroscopic quantities. In this case, macroscopic boundary conditions can be imposed. Moreover, a QHD model with a "smooth" potential has been derived in (3-4).

Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation

Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon

Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire

Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates

Repeatable Asymmetric Resonant Tunneling in AlGaN/GaN Double Barrier Structures Grown on Sapphire

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

III-nitrides Based Resonant Tunneling Diodes

The Material Structure Research of the GaAs-based Resonant Tunneling Diode

Fabrication of P-Well Resonant Tunneling Diode Based on SiGe/Si and Its DC-parameter Extraction

A Novel Resonant Tunneling Diode Based on AlGaAsP/GaAs and Its Circuit Level Design

Low leakage current in isolated AlGaN/GaN heterostructure on Si substrate by N ion implantation performed at an elevated temperature

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

Ultralow-Supersaturation Al Pretreatment Toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates

Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping

GdN Nanoisland-Based GaN Tunnel Junctions

Numerical Simulation of Negative Differential Resistance Characteristics in Si/Si1- χGeχRTD at Room Temperature

Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures

Negative Differential Resistance Device with High Peak-to-Valley Ratio Realized by Subband Resonant Tunneling of Γ-Valley Carriers in WSe2/ h-BN/WSe2 Junctions

Numerical Simulation of Negative Differential Resistance Characteristics in Si/Si1¡xGex RTD at Room Temperature

Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer

Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate