20Gb/s PAM-4 Generation by Modulating a Single-Drive Push-Pull Silicon Dual-Ring Modulator with 3Vpp

Dongsheng Zheng,Ciyuan Qiu

2019-01-01

Abstract:We investigate the enhanced modulation efficiency of a silicon dual-ring modulator. Benefiting from single-drive push-pull configuration, 4-level pulse amplitude modulation is experimentally demonstrated at a bit rate of 20 Gbit/s with 3 V pp .

What problem does this paper attempt to address?

Demonstration of a Push-Pull Silicon Dual-Ring Modulator with Enhanced Optical Modulation Amplitude

Dongsheng Zheng,Ciyuan Qiu,Hongxia Zhang,Xinhong Jiang,Yikai Su

DOI: https://doi.org/10.1109/jlt.2020.2978149

IF: 4.7

2020-01-01

Journal of Lightwave Technology

Abstract:In this article, we demonstrate a push-pull silicon dual-ring modulator based on two cascaded rings which are coupled with each other through two parallel bus waveguides. In the transmission spectrum of the modulator, a narrow transparency peak exists in the center of the broad dip based on the electromagnetically induced transparency (EIT)-like effect. Benefiting from both the EIT-like effect and push-pull drive configuration, a low insertion loss (IL) of 1.4 dB and an extinction ratio (ER) over 6.4 dB are obtained at a bit rate of 10 Gb/s with a peak-to-peak driving voltage (Vpp) of 5 V. The corresponding maximum optical modulation amplitude (OMA) is 0.56, which is almost twice that of a single micro-ring modulator with the same driving voltage. Moreover, the maximum OMA is 0.47 at 20 Gb/s, which is 81% larger than that of a single micro-ring modulator.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
High-speed silicon modulator based on cascaded microring resonators.

Yingtao Hu,Xi Xiao,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015079

IF: 3.8

2012-01-01

Optics Express

Abstract:A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB. Enhancement of the modulator achieves with an ultra-high optical bandwidth of 0.41 nm, corresponding to 51 GHz, was accomplished by using cascaded double ring structure. The described modulator can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device. (c) 2012 Optical Society of America
44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

Xi Xiao,Xianyao Li,Hao Xu,Yingtao Hu,Kang Xiong,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2012.2213244

IF: 2.6

2012-01-01

IEEE Photonics Technology Letters

Abstract:We experimentally demonstrate silicon microring modulators with >40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85 x 10(-5)/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of similar to 8 000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.
32-Gb/s OOK and 64-Gb/s PAM-4 Modulation Using a Single-Drive Silicon Mach–Zehnder Modulator with 2 V Drive Voltage

Gangqiang Zhou,Linjie Zhou,Yuyao Guo,Shuhuang Chen,Liangjun Lu,Lei Liu,Jianping Chen

DOI: https://doi.org/10.1109/jphot.2019.2954597

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:We demonstrate a high-efficiency silicon Mach-Zehnder modulator with U-shaped PN junctions. The depletion region of the U-shaped PN junction has a large overlap with the waveguide optical mode, leading to a low drive voltage. The calculated modulation efficiency is 0.33 V center dot cm at 0 V bias and 0.55 V center dot cm at -2 V bias. On-off keying (OOK) modulation and four-level pulse amplitude modulation (PAM-4) are achieved at 32 Gb/s and 64 Gb/s data rates under 2 V drive voltage, respectively. The bit error rate for the PAM-4 modulation is below the hard-decision forward error correction threshold of 3.8 x 10(-3).
25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

Xi Xiao,Yingtao Hu,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1117/12.920386

2011-01-01

Abstract:We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions are vertical to the waveguide's propagation direction and tolerant with +/- 150nm junction misalignment on the cost of little degradation on the modulation efficiency. The device was fabricated with standard 0.18 mu m CMOS process, and provides a V pi L pi < 1V.cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally demonstrated.
32-Gb/s OOK and 64-Gb/s PAM-4 Modulation Using a Single-Drive Silicon Mach–Zehnder Modulator with 2 V Drive Voltage

Gangqiang Zhou,Linjie Zhou,Yuyao Guo,Shuhuang Chen,Liangjun Lu,Lei Liu,Jianping Chen

DOI: https://doi.org/10.1109/JPHOT.2019.2954597

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:We demonstrate a high-efficiency silicon Mach-Zehnder modulator with U-shaped PN junctions. The depletion region of the U-shaped PN junction has a large overlap with the waveguide optical mode, leading to a low drive voltage. The calculated modulation efficiency is 0.33 V·cm at 0 V bias and 0.55 V·cm at -2 V bias. On-off keying (OOK) modulation and four-level pulse amplitude modulation (PAM-4) are achieved at 32 Gb/s and 64 Gb/s data rates under 2 V drive voltage, respectively. The bit error rate for the PAM-4 modulation is below the hard-decision forward error correction threshold of 3.8 × 10-3.
Bpsk And Pam Modulation In A Single-Drive Push-Pull Silicon Michelson Interferometric Modulator

Minjuan Wang,Linjie Zhou,Yanyang Zhou,Jianping Chen

DOI: https://doi.org/10.1364/cleo_si.2016.stu4g.7

2016-01-01

Abstract:20 Gbaud/s PAM-4 and 28 Gb/s BPSK modulation are demonstrated in a single-drive push-pull silicon Michelson interferometric modulator with similar to 3 dB on-chip insertion loss. The modulator features a compact size and a high extinction ratio.
30 Gbps high optical bandwidth silicon modulator

Hao Xu,Xianyao Li,Xi Xiao,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1109/Group4.2013.6644431

2013-01-01

Abstract:We report a high speed silicon modulator with a 3 dB optical bandwidth of 39 nm. 30 Gbps electro-optical modulations were experimentally demonstrated with a low driving voltage of 3 V.
Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Xi Xiao,Hao Xu,Xianyao Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/CLEOPR.2013.6600260

2013-01-01

Abstract:Compact and high-speed silicon microring and Mach-Zehnder modulators are presented. Low-power serial 60 Gbit/s and 4λ×50 Gbit/s modulations are both experimentally demonstrated.
Ultrahigh Extinction Ratio Silicon Micro-Ring Modulator by MDM Resonance for High Speed PAM Modulation

Jiacheng Liu,Jiangbing Du,Weihong Shen,Gangqiang Zhou,Linjie Zhou,Ke Xu,Zuyuan He

DOI: https://doi.org/10.1364/ofc.2022.th2a.8

2022-01-01

Abstract:Silicon micro-ring modulator assisted by MDM resonance is experimentally demonstrated. Ultrahigh ER up to 55 dB was obtained for supporting 50 Gb/s PAM4 signaling with 0.79-V.cm VπL, indicating promising performance for advanced modulation formats. © 2022 The Author(s)
50 Gb/s Silicon QPSK Modulator with Single-Drive Push-Pull Traveling Wave Electrodes Design

Haike Zhu,Linjie Zhou,Tao Wang,Lei Liu,Yanyang Zhou,Jinting Wang,Qianqian Wu,Anbang Xie,Rui Yang,Zuxiang Li,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1364/acpc.2014.af1a.2

2014-01-01

Abstract:We demonstrate a silicon QPSK modulator consisting of two nested Mach-Zehnder interferometers with 3.5 mm long traveling-wave electrodes. 50 Gb/s QPSK modulation is achieved with power consumption of 9.3 pJ/bit.
An Experimental Demonstration of 160-Gbit/s PAM-4 Using a Silicon Micro-Ring Modulator

Yeyu Tong,Zhouyi Hu,Xinru Wu,Songtao Liu,Lin Chang,Andrew Netherton,Chun-Kit Chan,John E. Bowers,Hon Ki Tsang

DOI: https://doi.org/10.1109/lpt.2019.2960238

IF: 2.6

2020-01-01

IEEE Photonics Technology Letters

Abstract:Silicon photonics has been regarded as a promising technology for future small-footprint, low-cost and low-power 400-Gbit/s datacenter interconnects (DCIs). In this work, for the first time, we report an experimental demonstration of a single-wavelength, single-polarization 160-Gbit/s four-level pulse-amplitude modulation (PAM-4) employing a single integrated silicon carrier-depletion micro-ring modulator (MRM). The measured bit-error rates (BERs) for the back-to-back (BTB) and after 1-km standard single-mode fiber (SSMF) transmission are 1.36E-3 and 2.12E-3, respectively, all below the hard-decision forward error correction (HD-FEC) coding limit with 7% overhead. A data rate of up to 170 Gbit/s with a BER lower than the HD-FEC limit is demonstrated for the BTB transmission.
Power-Efficient O-Band 40 Gbit/s PAM4 Transmitter Based on Dual-Drive Cascaded Carrier-Depletion and Carrier-Injection Silicon Mach-Zehnder Modulator with Binary Driving Electronics at CMOS Voltages

Guo-Wei Lu,Hong-Bo Zhang,Satoshi Shinada,Jianxun Hong,Yongpeng Cheng,Shiyoshi Yokoyama

DOI: https://doi.org/10.1109/jstqe.2021.3056721

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:We present an O-band four-level pulse amplitude modulation (PAM4) transmitter based on a dual-drive silicon modulator with binary driving electronics at CMOS voltages, effectively eliminating the need for power-hungry digital-to-analog converters (DACs) and RF drivers. The fabricated dual-drive silicon modulator has cascaded p-n junction and p-i-n junction embedded in each arm of Mach-Zehnder interferometer, implementing high-speed data modulation and efficient bias control, respectively. Power dissipation of around 611 fJ/bit is obtained when synthesizing 46 Gb/s PAM4, showing high power efficiency. The fabricated silicon modulator exhibits a π-voltage-length product of 4.5 V·mm, and a 3-dB bandwidth of up to 27 GHz. Meanwhile, to implement a power-efficient PAM4 transceiver, the digital signal processing (DSP) at the receiver side is also discussed by balancing the performance and complexity. With a low-complexity DSP, negligible power penalty is observed after transmission over 38-km SSMF for both synthesized 20 Gb/s and 40 Gb/s PAM4. The presented PAM4 transmitter takes the advantages of both carrier-depletion and carrier-injection phase shifters for effective data modulation and bias control in PAM4 signalingand provides a power-efficient transmitter solution by eliminating the use of power-hungry DACs or RF drivers for datacenter interconnects.
64 Gb/s silicon QPSK modulator with single-drive push-pull traveling wave electrodes

Haike Zhu,Linjie Zhou,Tao Wang,Lei Liu,Chi Yan Wong,Yanyang Zhou,Jinting Wang,Qianqian Wu,Anbang Xie,Rui Yang,Zuxiang Li,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1364/cleo_si.2015.sw3n.7

2015-01-01

Abstract:We demonstrate a silicon QPSK modulator consisting of two nested Mach-Zehnder interferometers with 3.5 mm long traveling-wave electrodes. 64 Gb/s QPSK modulation is achieved with an EVM of 24.4% and power consumption of 7.1 pJ/bit.
25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

Xi Xiao,Hao Xu,Xianyao Li,Yingtao Hu,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.002507

IF: 3.8

2012-01-01

Optics Express

Abstract:A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated. It is fabricated using standard 0.18 μm complementary metal-oxide-semiconductor processes and provides low V(π)L(π)s of 0.68 V·cm to 1.64 V·cm with a moderate doping concentration of 2 × 10(17) cm(-3). The measured modulation efficiency decreases by only 12.4% under ± 150 nm alignment errors. 25 Gbit/s non-return-zero modulation with a 4.5 dB extinction ratio is experimentally realized at a peak-to-peak driving voltage of 2 V, demonstrating the excellent performance of the novel doping profile.
Optical PAM-4 Signal Generation Using a Silicon Mach-Zehnder Optical Modulator

Sizhu Shao,Jianfeng Ding,Lingchen Zheng,Kaiheng Zou,Lei Zhang,Fan Zhang,Lin Yang

DOI: https://doi.org/10.1364/oe.25.023003

IF: 3.8

2017-01-01

Optics Express

Abstract:In this paper we demonstrate the 4 level pulse amplitude modulation (PAM-4) signal generation through a silicon Mach-Zehnder modulator. The baud speed of the PAM-4 signal generation is characterized up to 32 Gbaud (64Gb/s). And we have measured the device's bit error rate (BER) up to 32 Gbaud and the spurious free dynamic range (SFDR) of the distortion component of the modulated light.
Optimized Silicon Mzi Modulators for 50 Gbit/S Ook and 40 Gbit/S Bpsk Modulation

Yanyang Zhou,Linjie Zhou,Haike Zhu,Jingting Wang,Feiran Su,Zhiren Wang,Lei Liu,Tao Wang,Xinwan Li,Jianping Chen

DOI: https://doi.org/10.1109/oecc.2015.7340098

2015-01-01

Abstract:We report 50Gb/s On-Off keying (OOK) and 40Gb/s binary phase shift keying (BPSK) modulation in a single-drive push-pull silicon Mach-Zehnder modulator with optimized segmented electrode design. The measured modulation efficiency (Vπ·Lπ) is ~1.77 V·cm at 4.0 V reverse bias and the electro-optic (EO) 3-dB bandwidth exceeds 30 GHz at 6.0 V reverse bias.
Large 10-Db Bandwidth And Low Insertion Loss Silicon Dual-Ring Modulator

Hongxia Zhang,Xinhong Jiang,Ciyuan Qiu

DOI: https://doi.org/10.1109/acp.2018.8596237

2018-01-01

Abstract:A silicon dual-ring modulator with 10-dB bandwidth of 0.08 nm and low insertion loss of 1.1 dB is experimentally demonstrated. The modulation speed of the dual-ring modulator can be as high as 20 Gb/s.

20Gb/s PAM-4 Generation by Modulating a Single-Drive Push-Pull Silicon Dual-Ring Modulator with 3Vpp

Demonstration of a Push-Pull Silicon Dual-Ring Modulator with Enhanced Optical Modulation Amplitude

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

High-speed silicon modulator based on cascaded microring resonators.

44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

32-Gb/s OOK and 64-Gb/s PAM-4 Modulation Using a Single-Drive Silicon Mach–Zehnder Modulator with 2 V Drive Voltage

25Gbit/s Fully Cmos-Compatible Silicon Modulator Based on Interleaved Pn Junctions

32-Gb&#x002F;s OOK and 64-Gb&#x002F;s PAM-4 Modulation Using a Single-Drive Silicon Mach&#x2013;Zehnder Modulator with 2 V Drive Voltage

Bpsk And Pam Modulation In A Single-Drive Push-Pull Silicon Michelson Interferometric Modulator

30 Gbps high optical bandwidth silicon modulator

Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Ultrahigh Extinction Ratio Silicon Micro-Ring Modulator by MDM Resonance for High Speed PAM Modulation

50 Gb/s Silicon QPSK Modulator with Single-Drive Push-Pull Traveling Wave Electrodes Design

An Experimental Demonstration of 160-Gbit/s PAM-4 Using a Silicon Micro-Ring Modulator

Power-Efficient O-Band 40 Gbit/s PAM4 Transmitter Based on Dual-Drive Cascaded Carrier-Depletion and Carrier-Injection Silicon Mach-Zehnder Modulator with Binary Driving Electronics at CMOS Voltages

64 Gb/s silicon QPSK modulator with single-drive push-pull traveling wave electrodes

25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

Optical PAM-4 Signal Generation Using a Silicon Mach-Zehnder Optical Modulator

Optimized Silicon Mzi Modulators for 50 Gbit/S Ook and 40 Gbit/S Bpsk Modulation

Large 10-Db Bandwidth And Low Insertion Loss Silicon Dual-Ring Modulator

32-Gb/s OOK and 64-Gb/s PAM-4 Modulation Using a Single-Drive Silicon Mach–Zehnder Modulator with 2 V Drive Voltage