Abstract:The 2 mu m wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach-Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (V-pi (.) L-pi) is 2.68 V(.)cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 mu m measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 mu m wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 mu m window. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.

Ultrahigh Extinction Ratio Silicon Micro-Ring Modulator by MDM Resonance for High Speed PAM Modulation

Ultrahigh extinction ratio silicon micro-ring modulator by MDM resonance for high speed PAM modulation

Ultrahigh extinction ratio silicon micro-ring modulator by MDM resonance for high speed PAM-4 and PAM-8 signaling

High-speed silicon modulator based on cascaded microring resonators.

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

High-speed Silicon Micro-Ring Modulator at 2-Μm Waveband

High-speed low-chirp PAM-4 transmission based on push-pull silicon photonic microring modulators

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Ultra-Wide Free-Spectral-Range Silicon Microring Modulator for High Capacity WDM

240 Gb/s Optical Transmission Based on an Ultrafast Silicon Microring Modulator

Compact and power-efficient silicon modulators Beyond 60 Gbit/s

An Experimental Demonstration of 160-Gbit/s PAM-4 Using a Silicon Micro-Ring Modulator

25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

High-Speed Silicon Microring Modulator Based on Zigzag Pn Junction

High-speed Silicon Modulators for the 2 Μm Wavelength Band

20Gb/s PAM-4 Generation by Modulating a Single-Drive Push-Pull Silicon Dual-Ring Modulator with 3Vpp

Enhanced Performance and Flexibility in Silicon Modulators Based on a Coupled-Ring-Resonator Structure

Improved Extinction Ratio of Mach-Zehnder Based Optical Modulators on CMOS Platform

Optical Ring-Resonator Modulator Based on 0.8 Μm CMOS Technology

100-Gb/s PAM-4 Transmission for Next-Generation Optical Access Networks Using a Silicon Micro-Ring Resonator