Effect Of Doped Concentration On The Dielectric Properties Of K And Mg Alternately Doped Bst Films

Yang Hanyu,Liao Jiaxuan,Wang Sizhe,Wei Xiongbang,Wu Mengqiang

2015-01-01

Rare Metal Materials and Engineering

Abstract:K and Mg alternately doped BST films with doped concentration of 1 mol%-15 mol% were prepared by a sol-gel method. The influence of the doped concentration on the structure and dielectric properties of the films were studied. X-ray diffraction (XD) shows that the films exhibit perovskite polycrystalline structure. Scanning electron microscope (SEM) images show that the films are compact and have uniform grain size. The alternately doped films become smoother with decreased doped concentration. With the increase of doped concentration, the crystallization gets weaker, dielectric loss and average grain size tend to decrease. The alternately doped films exhibit higher tunability and lower dielectric loss which combine the advantages of K doped BST films and Mg doped BST films. The figure of merit is also extensively improved. The films with the doped concentration of 5 mol% present the best dielectric properties with dielectric loss less than 1.63% and tunability 40.9%, satisfying the needs of microwave tuned devices. The related mechanism was also analyzed.