Abstract:As the third generation semiconductor material,gallium nitride(GaN)is widely used in electronic devices and optoelectronic devices due to its excellent characteristics such as wide band gap,high breakdown field strength,high electron mobility,outstanding thermal conductivity,and direct band gap.However,it is difficult to obtain high quality single crystal GaN thin films due to the mismatch between GaN material and substrate in early phase of preparation.Until the two-step growth method is proposed,in which the nucleation layer of aluminum nitride(AlN)is firstly grown on the substrate at low temperature,and then GaN is grown at high temperature,the quality of GaN is greatly improved.Nowadays,AlN nucleation layers are fabricated via magnetron sputtering and molecular beam epitaxy,etc.To further improve the quality of GaN crystals,this study used plasma-enhanced atomic layer deposition(PEALD)method to prepare AlN nucleation layers for the epitaxial growth of GaN on a two-inch c-plane sapphire substrate.Compared with the magnetron sputtering method and molecular beam epitaxy method,the crystal quality of AlN prepared by PEALD method displays advantages of simple process,low cost and high yield.Measurements on deposited AlN films show that the deposition rate is 0.1 nm/cycle and the films have island-like structures varying with its thickness.Epitaxial GaN measurements show that GaN epitaxial layer can obtain the smoothest surface with a root mean square roughness of 0.272 nm,the best optical properties,and the lowest dislocation density when AlN is deposited with a thickness of 20.8 nm.In conclusion,a new method of epitaxial single crystal GaN on AlN prepared by PEALD has been built with optimal deposition at 20.8 nm of AlN to obtain high quality GaN thin films,it can be used to prepare high electron mobility transistors and light-emitting diodes.

A New Approach To Grow Gan By Low-Pressure Mocvd Using A Three Steps Technique

MOCVD Growth of Device-Quality GaN on Sapphire Using a Three-Step Approach

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

MOCVD Growth of Device—quality GaN on Sapphire

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

GaN thin film upgrowth method based on Al3O2 substrate

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition

Low-Temperature Growth of Crystalline Gallium Nitride Films Using Vibrational Excitation of Ammonia Molecules in Laser-Assisted Metalorganic Chemical Vapor Deposition

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Growth of A-Plane GaN Films on R-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method

Rapid Growth of M-Plane Oriented Gallium Nitride Nanoplates on Silicon Substrate Using Laser-Assisted Metal Organic Chemical Vapor Deposition

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

A Novel MOCVD Reactor for Growth of High-Quality GaN-related LED Layers

Lateral Epitaxial Overgrowth of GaN Films on Patterned Sapphire Substrates Fabricated by Wet Chemical Etching

Study on Growing Thick AlGaN Layer on C-Plane Sapphire Substrate and Free-Standing GaN Substrate

Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template

Epitaxial Lateral Overgrowth of High Quality GaN by MOCVD

The Chemistry of GaN Growth