Abstract:The image shows a graphite susceptor, on which GaN wafers were grown. Uniformity of the produced wafers is at the heart of high-power-LED industries. The main purpose of the paper is to propose a direction to optimize the MOCVD reactors by comprehensively analyzing uniformities of the wafers. To achieve this goal, growth of GaN compounds in a specific MOCVD reactor, capable of a one-time production of 36 × 2″ wafers of nitrides, has been investigated. To examine growth uniformity across a wafer and from wafer to wafer, the reactor is divided into Zone A, Zone B and Zone C according to distance to the center of the graphite susceptor. Comparative analysis of each zone offers a straightforward view of the mean excitation wavelength, luminous intensity, film thickness and their standard deviations. Conformity of the growth uniformity in each zone is further checked carefully through averaging across-wafer and wafer-to-wafer variables and their standard deviations. Zone B is found to retain excellent wavelength uniformity, since it is located at the middle of the susceptor with weaker effects of the susceptor edge and of the inlet gas flow. Zone A, at the center of the reactor, has the best mean intensity and thickness uniformities due to a well control of the infrared temperature measurement during the growth. Zone C is the worst in the uniformities, and should be the main focus when optimizing the reactor. The above experimental analysis reveals the principles common to the MOCVD technique, and provides a basic for further optimization of the process window to improve the cycles with considerable reduction of the costs. (Picture: Haisheng Fang et al., 10.1002/crat.201500135 pp. 30–40, in this issue)

A Novel MOCVD Reactor for Growth of High-Quality GaN-related LED Layers

Buffered distributed spray MOCVD reactor for LED production

Uniformity investigation of MOCVD‐grown LED layers

Uniformity Investigation of MOCVD‐grown LED Layers Page 30–40 Haisheng Fang Et Al.

A Buffered Distributed Spray Mocvd Reactor Design

Numerical Study And Optimization Of Gan Thin-Film Growth By Mocvd Method

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

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Development of Vertical High-Vacuum MOCVD and Its Applications in GaN Epitaxial Growth and GaN-Based Device Fabrication

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Influencing factors of GaN growth uniformity through orthogonal test analysis

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

Manufacturing of Gallium Nitride Thin Films in a Multi-Wafer MOCVD Reactor

New Design of Nozzle Structures and Its Effect on the Surface and Crystal Qualities of Thick GaN Using a Horizontal HVPE Reactor

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Species Transport and Chemical Reaction in a MOCVD Reactor and Their Influence on the GaN Growth Uniformity

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

High Quality GaN-based LED Epitaxial Layers Grown in a Homemade MOCVD System

Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

GaN Epitaxial Layers Grown on Multilayer Graphene by MOCVD

GaN-Based LEDs Grown on Graphene-Covered SiO2/Si (100) Substrate