Fabrication Process of Sol-Gel Spin Coating for Srbi2ta2o9 Films Applied to Feram

Ze Jia,Tian-Liang Ren,Zhi-Gang Zhang,Tian-Zhi Liu,Xin-Yi Wen,Dan Xie,Li-Tian Liu
DOI: https://doi.org/10.1088/0256-307x/23/7/079
2006-01-01
Chinese Physics Letters
Abstract:We invetsigate SrBi2Ta2O9 (SBT) films prepared by the sol-gel spin method with different spin rates or different anneal conditions for the first year of SBT, as a promising ferroelectric layer materials applied to ferroelectric random access memory (FeRAM). All the specimens in this experiment have similar SBT crystal orientations of (115), (020), (220), and (135). The Pt/SBT/Pt capacitor with coating of 3000rpm spin rate has a perfect rectangle shape of hysteresis loops, remanent polarization of 7.57 mu C/cm(2) and coercive voltage of 0.816 V at 5 V voltage amplitude. These characteristics are better than those with coating of 3500 rpm spin rate, which is attributed to the influence for thickness and grain size of the film from depressed spin rate. Slow-rate anneal in the furnace for the first layer of SBT can improve the crystallization processes and properties for SBT layers slightly, compared with rapid thermal annealing. The ion damage from etching for the top electrode can influence leakage current characteristics of the Pt/SBT/Pt capacitor at positive voltage bias.
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