Abstract:Spintronics strives to revolutionize conventional electronics by integrating magnetic materials with semiconductor devices, such as the spin field effect transistor (SFET), which not only improve the capabilities of electronic devices, but develop new functionalities. For electrodes of spin injection and detection in SFET device, half metallic Fe3O4 is an attractive candidate because its high Curie temperature of 858 K, large spin polarization near 100% at the Fermi level and relatively high electronic conductivity at room temperature, which is believed to benefit the injection of spin carriers into the semiconductors. For ferromagnetic metal(FM)/Semiconductor system, Fe3O4/GaAs is a very promising system for the fabrication of magnetoelectronic devices due to the Schottky contact of the Fe3O4/GaAs interface, which is crucial for studying the behaviors of spin dependent transportation for the devices. It is reported that in a FM/I/NM/I/FM double tunnel junction, where NM is the normal metal, and I the insulating barrier, theories predicted an oscillation of the tunneling magnetoresistance (TMR) effect as a function of the NM layer thickness because the spin polarization of the tunneling electron oscillates as a result of the resonant tunneling. Furthermore, Quantum oscillation of spin polarization in GaAs channel was experimentally demonstrated. In this paper, we have presented a theoretical approach to the tunneling conductance and TMR in a Fe3O4/GaAs/Fe3O4 magnetic double tunnel junction with both ballistic and diffusive components.

The Tunneling Magnetoresistance Of Fe(3)O(4) Polycrystalline Film

Tunneling magnetoresistance in Fe-oxide film

Interfacial Composition and Microstructure of Fe3o4 Magnetic Tunnel Junctions

Giant Tunneling Magnetoresistance in Polycrystalline Nanostructured Zn/sub X/fe/sub 3-X/o/sub 4/-Α-fe/sub 2/o/sub 3/

Giant tunneling magnetoresistance in polycrystalline nanosturucrured ZnxFe3-xO4-α-Fe2O3

GIANT TUNNELING MAGNETORESISTANCE IN NANOSTRUCTURED Znx Fe3-x O4-α-Fe2 O3 POLYCRYSTALLINE MATERIAL

Magnetic And Electric Properties Of Fe3o4 Thin Films Sputtered On Metallic Underlayer

Giant Room-Temperature Magnetoresistance in PolycrystallineZn0.41Fe2.59O4

Amplification of Magnetoresistance of Magnetite in an Fe3O4–SiO2–Si Structure

Large Low Field Magnetoresistance In Ultrathin Nanocrystalline Magnetite Fe3o4 Films At Room Temperature

Study of MR in Fe/sub 3/O/sub 4/ tunnel junctions

Magnetoelectric transport properties of quenched polycrystalline magnetite

Magnetic Properties of Nanocrystalline Fe3O4 Films

Oscillatory Tunneling Magnetoresistance In Fe3o4/Gaas/Fe3o4 Junction

Reactively Sputtered Fe3O4-based Films for Spintronics

Features of Low Temperature Tunnel Magnetoresistance in Pressed Powder of Chromium Dioxide

Amplification of Magnetoresistance and Hall Effect of Fe3O4–SiO2–Si Structure

Antiferromagnetic-coupling-induced Magnetoresistance Enhancement in Fex(TiO2)1−x Films

Direct Observation of Spin Polarization in Epitaxial Fe3O4(001)/MgO Thin Films Grown by Magnetron Sputtering

Inverse and Normal Tunneling Magnetoresistance Effects in Fecogd/Feco/Alo/Feco Multilayers

Structure and Magnetic Properties of Amorphous and Polycrystalline Fe3O4 Thin Films