Abstract:The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of device resistances. In this study, we demonstrated TMR ratios of up to 631% at room temperature (RT), which is two or more times larger than those used currently for magnetoresistive random access memory (MRAM) devices, using CoFe/MgO/CoFe(001) epitaxial MTJs. The TMR ratio increased up to 1143% at 10 K, which corresponds to an effective tunneling spin polarization of 0.923. The observed large TMR ratios resulted from the fine-tuning of atomic-scale structures of the MTJs, such as crystallographic orientations and MgO interface oxidation, in which the well-known Delta1 coherent tunneling mechanism for the giant TMR effect is expected to be pronounced. However, behavior that is not covered by the standard coherent tunneling theory was unexpectedly manifested; i.e., (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMR oscillation with a 0.32 nm period in MgO thickness. Particularly, the TMR oscillatory behavior dominates the transport in a wide range of MgO thicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140% at RT, attributable to the appearance of large oscillatory components in resistance area product (RA). Further, we found that the oscillatory behaviors of the TMR ratio and RA survive, even under a +-1 V bias voltage application, indicating the robustness of the oscillation. Our demonstration of the giant RT-TMR ratio will be an essential step for establishing spintronic architectures, such as large-capacity MRAMs and spintronic artificial neural networks. More essentially, the present observations can trigger us to revisit the true TMR mechanism in crystalline MTJs.

GIANT TUNNELING MAGNETORESISTANCE IN NANOSTRUCTURED Znx Fe3-x O4-α-Fe2 O3 POLYCRYSTALLINE MATERIAL

Giant Tunneling Magnetoresistance in Polycrystalline Nanostructured Zn/sub X/fe/sub 3-X/o/sub 4/-Α-fe/sub 2/o/sub 3/

Giant Room-Temperature Magnetoresistance in PolycrystallineZn0.41Fe2.59O4

Giant tunneling magnetoresistance in polycrystalline nanosturucrured ZnxFe3-xO4-α-Fe2O3

Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

Large Low-Field Magnetoresistance in Ferrite/Insulator Granular Systems

Large Low Field Magnetoresistance In Ultrathin Nanocrystalline Magnetite Fe3o4 Films At Room Temperature

Giant Tunnel Magnetoresistance with a Single Magnetic Phase-Transition Electrode

Magnetic and Transport Property Studies of Nanocrystalline ZnxFe3−xO4

Giant Magnetoresistance in Y0.9la0.1mn6sn6 Compound

Giant Positive Magnetoresistance in Co@CoO Nanoparticle Arrays

The Tunneling Magnetoresistance Of Fe(3)O(4) Polycrystalline Film

Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions

Interfacial Composition and Microstructure of Fe3o4 Magnetic Tunnel Junctions

Tunneling magnetoresistance effect with controlled spin polarization based on Mn 3 ZnN

Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes

Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

40% Tunneling Magnetoresistance after Anneal at 380 °C for Tunnel Junctions with Iron-Oxide Interface Layers

Annealing Effect of Magnetic Tunnel Junctions with One Feox Layer Inserted at the Al2o3/Cofe Interface

Giant Magnetoresistance in Transition-Metal-Doped Zno Films

Fully Epitaxial (zn,co)o∕zno∕(zn,co)o Junction and Its Tunnel Magnetoresistance