Coherent Resonant Tunneling Through Double Metallic Quantum Well States.
Bingshan Tao,Caihua Wan,Ping Tang,Jiafeng Feng,Hongxiang Wei,Xiao Wang,Stephane Andrieu,Hongxin Yang,Mairbek Chshiev,Xavier Devaux,Thomas Hauet,Francois Montaigne,Stephane Mangin,Michel Hehn,Daniel Lacour,Xiufeng Han,Yuan Lu
DOI: https://doi.org/10.1021/acs.nanolett.9b00205
IF: 10.8
2019-01-01
Nano Letters
Abstract:Study of resonant tunneling through multimetallic quantum well (QW) structure is not only important for the fundamental understanding of quantum transport but also for the great potential to generate advanced functionalities of spintronic devices. However, it remains challenging to engineer such a structure due to the short electron phase coherence length in metallic QW system. Here, we demonstrate the successful fabrication of double-QW structure in a single fully epitaxial magnetic tunnel junction (MTJ) heterostructure, where two Fe QW layers are sandwiched between three MgAlO x tunnel barriers. We show clear evidence of the coherent resonant tunneling through the discrete QW states in the two QWs. The coherent resonant tunneling condition is fulfilled only when the middle barrier between the two QWs is thin enough and available QW states are present simultaneously in both QWs under a certain bias. Compared to the single QW structure, the resonant tunneling in double-QW MTJ produces strong conductivity oscillations with much narrower peak width (about half) owing to the enhanced energy filtering effect. This study presents a comprehensive understanding of the resonant tunneling mechanism in MTJ with multiple QWs, which is essential for future development of new spintronic devices operating in the quantum tunneling regime.