Abstract:We study the properties of Dirac fermions on the surface of a topological insulator in the presence of crossed electric and magnetic fields. We provide an exact solution to this problem and demonstrate that, in contrast to their counterparts in graphene, these Dirac fermions allow relative tuning of the orbital and Zeeman effects of an applied magnetic field by a crossed electric field along the surface. We also elaborate and extend our earlier results on normal metal-magnetic film-normal metal (NMN) and normal metal-barrier-magnetic film (NBM) junctions of topological insulators [Phys. Rev. Lett. {\bf 104}, 046403 (2010)]. For NMN junctions, we show that for Dirac fermions with Fermi velocity $v_F$, the transport can be controlled using the exchange field ${\mathcal J}$ of a ferromagnetic film over a region of width $d$. The conductance of such a junction changes from oscillatory to a monotonically decreasing function of $d$ beyond a critical ${\mathcal J}$ which leads to the possible realization of magnetic switches using these junctions. For NBM junctions with a potential barrier of width $d$ and potential $V_0$, we find that beyond a critical ${\mathcal J}$, the criteria of conductance maxima changes from $\chi= e V_0 d/\hbar v_F = n \pi$ to $\chi= (n+1/2)\pi$ for integer $n$. Finally, we compute the subgap tunneling conductance of a normal metal-magnetic film-superconductor (NMS) junctions on the surface of a topological insulator and show that the position of the peaks of the zero-bias tunneling conductance can be tuned using the magnetization of the ferromagnetic film. We point out that these phenomena have no analogs in either conventional two-dimensional materials or Dirac electrons in graphene and suggest experiments to test our theory.

Electron Tunneling Through Double Magnetic Barriers On The Surface Of A Topological Insulator

Tunneling through ferromagnetic barriers on the surface of a topological insulator

Electronic Transport in Nanostructures Consisting of Magnetic Barriers.

Super-Resonant Transport of Topological Surface States Subjected to In-Plane Magnetic Fields

Bilinear Magnetoelectric Resistance As a Probe of Three-Dimensional Spin Texture in Topological Surface States

Magnetotransport of Dirac Fermions on the surface of a topological insulator

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Electron coherent tunneling in low-dimensional magnetic quantum structures

Electrically tuned magnetic order and magnetoresistance in a topological insulator

One-way Transmission of Electrons on the Topological Insulator Surface Modulated by Magnetic Potential

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Tunneling Tuned Spin Modulations in Ultrathin Topological Insulator Films

Gate-electric-field and magnetic-field control of versatile topological phases in a semi-magnetic topological insulator

Resonant Tunneling of Holes in Double-Barrier Structures in the Presence of an In-Plane Magnetic Field

Double ferromagnetic barriers resonant tunneling diodes (RTD) based on the surface of a topological insulator

Chiral Tunneling Modulated by a Time-Periodic Potential on the Surface States of a Topological Insulator

Simultaneous Electrical-Field-effect Modulation of Both Top and Bottom Dirac Surface States of Epitaxial Thin Films of Three-Dimensional Topological Insulators.

Exotic Tunneling Resistance in Graphene/topological Insulator Vertical Junction

Quantum Tunneling Through a Rectangular Barrier in Multi-Weyl Semimetals

Resonant Tunneling In Step-Barrier Structures Under An Applied Electric Field

Electron Tunneling Through a Planar Single Barrier in HgTe Quantum Wells with Inverted Band Structures