Abstract:Relaxed InyGa1_yAs epilayers grown on (0 0 1) GaAs are known to exhibit a cross-hatched surface with ridges running along the [1 1 0] and 1⁄21 % MnxAs epilayers grown on such buffer layers can 1 0] directions. We find that Ga1_x have as-grown Curie temperatures (TC) that are higher than the as-grown 110 K value typical of Ga1_xMnxAs/GaAs heterostructures. Further, low-temperature annealing leads to only modest additional increases in TC; contrasting with the behavior in Ga1_xMnxAs/GaAs where TC typically increases significantly upon annealing. Our observations suggest that the initial concentration of Mn interstitials in as-grown Ga1_xMnxAs /InyGa1_yAs heterostructures is smaller than that in as-grown Ga1_xMnxAs/GaAs heterostructures. We propose that strain-dependent diffusion may drive Mn interstitials from the bulk of the growing crystal to more benign locations on the ridged surface, providing a possible route towards defect-engineering in these materials. There is wide interest in the diluted magnetic semiconductor Ga1_xMnxAs for exploring proof of-concept applications in semiconductor spintro nics [1]. Ga1_xMnxAs is grown by low-tempera ture molecular beam epitaxy (LT-MBE), usually on GaAs (1 0 0) substrates, and exhibits ferromag netism for 0:02oxo0:09 with the ferromagnetic onding author. Tel.: +1-8148630136; fax: +1 7. address: nsamarth@psu.edu (N. Samarth). transition temperature (TC) ranging up to B110 K for as-grown samples. Post-growth annealing at low temperatures (180°C oTannealo260C) can increase TC up to B160 K [2–4]. The enhancement of TC is attributed to the migration of Mn interstitials (MnI) from the bulk of the sample to the surface; this reduces the compensation of exchange-mediating holes by these interstitial defects and hence increases TC [5,6]. This hypoth esis is also supported by scanning tunneling microscopy of the Ga1_xMnxAs surface [7] and

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Enhancement of Ferromagnetic Transition Temperature in (Ga, Mn) As by Post-Growth Annealing

Study of the Transport Properties of Annealed (ga,mn)as by X-Ray Absorption Spectroscopy

Effect of Annealing on Magnetic Properties of New (in,al,mn)as Ferromagnetic Semiconductors

Uniform Annealing Effect of Electron Irradiation on Ferromagnetic GaMnAs Thin Films

Temperature Dependence of the Anisotropic Magnetoresistance of the Metallic Antiferromagnet <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Fe</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi>As</mml:mi></mml:math>

Fabrication of Ferromagnetic (ga,mn)as by Ion Irradiation

Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices

The Effect of Low-Temperature Annealing on Ferromagnetic Ga 1−x Mn X As Thin Films Studied by Photoemission Spectroscopy

Effects of annealing on magnetic properties of new ferromagnetic semiconductor (In, Al, Mn)As

Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers

High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic capping

Preparation and properties of diluted magnetic semiconductors GaMnAs by low-temperature molecular epitaxy

Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption

High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping

Enhancement of Curie temperature in Ga 1 _ x Mn x As epilayers grown on crosshatched In y Ga 1 _ y As buffer layers

Magnetic Properties of (ga,mn)as (110) Epitaxial Films

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

Effect of Substrate Orientation on Magnetic Properties of (ga, Mn)As

Effect of Annealing on the Electric and Magnetic Properties of GaMnAs and Be-codoped GaMnAs