Spiral Optical Delay Lines In Silicon-On-Insulator

Yan Li,Xun Song,Yue Xu,Yanping Li

DOI: https://doi.org/10.1364/acpc.2016.af3g.6

2016-01-01

Abstract:Four spiral optical delay lines (ODLs) in silicon-on-insulator (SOI) with the length of 1.2055cm, 4.9915cm, 19.79cm and 44.18cm were fabricated and the average insertion loss was measured as 3.153dB/cm, 3.134dB/cm, 1.908dB/cm and 1.001dB/cm respectively.

What problem does this paper attempt to address?

Performance comparison of integrated optical switching delay lines on three typical photonic integration pilot lines

Shangqing Shi,Guohua Hu,Dongdong Lin,Jingyu Zhang,Pengcheng Liu,Mengjia Lu,Wei Cheng,Tong Lin,Binfeng Yun,Yiping Cui

DOI: https://doi.org/10.1016/j.optlastec.2022.109016

2022-12-13

Abstract:Integrated optical switching delay line (OSDL) chip, which is composed of optical switches cascaded with optical waveguides of different lengths, has the merits of ultra-wide delay bandwidth, very high delay accuracy and easy controlling. As one of the key components in microwave photonic beamforming system, OSDLs have drawn great attentions and various integrated OSDL chips have been demonstrated. Among them, the SOI (silicon-on-insulator) and Si 3 N 4 (silicon nitride) are the most popular platforms to fabricate OSDL chips due to their CMOS compatibilities. Nevertheless, the performances and characteristics of the OSDL chips fabricated on the three mainstream platforms have not been compared, which make it difficult to fair evaluate different technologies, which can provide useful guidance for real OSDL applications. To this end, we have designed, fabricated and packaged three OSDL chips based on SOI (The waveguide core thickness is 220 nm and 3 μm respectively) and Si 3 N 4 (double strip silicon nitride waveguide) on three photonic integration pilot lines successively. The performances of the fabricated OSDL chips were investigated and compared comprehensively, including the power consumption, switching time and fiber to fiber insertion loss. Then, the delay times of the three OSDLs were measured, which agree with our design very well. Finally, some discussions and future performance improvement methods of these OSDL chips are given.

optics,physics, applied
Silicon-on-Insulator-Based Compact Optical Demultiplexer Employing Etched Diffraction Grating

WH Wang,YZ Tang,YX Wang,HC Qu,YM Wu,T Li,JY Yang,YL Wang,M Liu

DOI: https://doi.org/10.1088/0256-307x/21/7/022

2004-01-01

Abstract:A compact optical demultiplexer with etched diffraction grating (EDG) is designed and fabricated on a silicon-on-insulator (SOI) material. Several 90degrees turning mirrors are used to bend the waveguides, and the size of the EDG-based demultiplexer is minimized to only 16 x 1.7 mm(2). The crosstalk is about -18 dB. The on-chip loss is about 18.2 dB, which is composed of about 16.9 dB excess loss and 1.3 dB diffraction loss. Measures to improve the performance are discussed.
Photonic Time-Wavelength Pulse Interleaver on Silicon

Yanping Li,Yan Li,Xiaoke Ruan,Fan Zhang,Zhangyuan Chen

DOI: https://doi.org/10.1117/12.2550036

2020-01-01

Abstract:The time-wavelength optical pulse interleaver is an important component of a wavelength-interleaved photonic analogto-digital converter (ADC). The two important performance indexes of interleavers are power imbalance and delay error. In order to reduce the power imbalance, a runway-shaped and shallow ridge silicon waveguide optical delay line (ODL) array is adopted. The measured average loss of the ODL is only 0.68 dB/cm. By measuring the delay of the ODL array, we optimize the ODL's length to reduce the interleaver's delay error. A four-channel interleaver with low loss and small delay error was fabricated on the silicon-on-insulator (SOI) platform, and the power imbalance is 0.9 dB. The root mean square (RMS) delay error is 0.34% and the crosstalk is below -20.3 dB.
System Performances of On-Chip Silicon Microring Delay Line for RZ, CSRZ, RZ-DB and RZ-AMI Signals

Qiang Li,Fangfei Liu,Ziyang Zhang,Yikai Su

DOI: https://doi.org/10.1109/JLT.2008.2005510

2008-01-01

Abstract:We theoretically study the group-delay characteris- tics of a silicon microring resonator based on the coupled mode theory, and experimentally demonstrate error-free operations of an on-chip delay line using a silicon-on-insulator (SOI) microring resonator with a 20- m radius. Four signals of different modula- tionformatsareexaminedat5Gb/s,includingreturn-to-zero(RZ), carrier-suppressed return-to-zero (CSRZ), return-to-zero duobi- nary (RZ-DB), and return-to-zero alternate-mark-inversion (RZ- AMI). Bit error rate (BER) measurements show that the maximal delaytimeswitherror-freeoperationsare80,95,110,and65ps,re- spectively,correspondingtoafractionalgroupdelayof 0.4, 0.5, 0.55, and 0.35. The differences in delay and signal degrada- tionshavebeeninvestigatedbasedonthesignalspectraandpattern dependences.Althoughthedelaysaredemonstratedinasinglering resonator, the analysis is applicable in slow-light resonance struc- tures such as all-pass filters (APF) and coupled resonator optical waveguides (CROW).
Performance of a silicon-microring slow-light delay line for advanced modulation formats

qiang li,fangfei liu,ziyang zhang,min qiu,tong ye,yikai su

DOI: https://doi.org/10.1364/SL.2008.SMC5

2008-01-01

Abstract:We experimentally demonstrate a delay line in silicon microring resonator with a 20-μm radius. The delay performances of six advanced modulation formats are investigated, including NRZ, RZ, DPSK, CSRZ, RZ-DB and RZ-AMI.
Optical Signal Processing in SOI Waveguide Devices

Yikai Su,Qiang Li,Fangfei Liu,Qingjiang Chang,Tao Wang,Ziyang Zhang,Min Qiu

DOI: https://doi.org/10.1109/oecc.2009.5218319

2009-01-01

Abstract:We experimentally demonstrate optical signal processing in silicon ring resonators, including slow-light delay of digital and microwave photonic signals, dense wavelength conversions/multicasting, optical up-conversion, format conversions, temporal differentiation, and bio-sensing.
Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Bowei Dong,Xin Guo,Chong Pei Ho,Bo Li,Hong Wang,Chengkuo Lee,Xianshu Luo,Guo-Qiang Lo

DOI: https://doi.org/10.1109/jphot.2017.2692039

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:In this paper, we demonstrate silicon-on-insulator (SOI) channel waveguides with propagation loss and $r$ = 10 $\mu$$\text{m}$ bends with bending loss as low as 2 dB/cm and 0.02 dB/90 $^{\circ }$ in the broad wavelength range of 3.68–3.88 $\mu$ $\text{m}$. We also indicate the limitation of SOI waveguide loss in mid-infrared wavelength by analyzing loss mechanisms. Based on this high-performance mid-infrared waveguide, we systematically analyze the coupling efficiency of various directional couplers, which are critical and commonly used building blocks for on-chip light routing and power splitting. By varying coupling length and sweeping wavelength, the performance of directional coupler with various gap separations is meticulously investigated in 3.68–3.88 $\mu$ $\text{m}$. A experimental database for directional coupler with any power splitting ratio is provided. Our results offer a promising broadband platform for dense wavelength division multiplexing (DWDM) and applications that require precise control of coupling such as racetrack resonator in the mid-infrared region.
Rapid-calibration optical tunable delay line on 3-μm-thick SOI photonic platforms

Ang Lee,Neng Yang Zhao,Hao Wang,Xianghua Liu,Chenyang Liu,Yanyue Ding,Chao Qiu,Ruxue Wang,Aimin Wu

DOI: https://doi.org/10.1364/oe.522140

IF: 3.8

2024-08-22

Optics Express

Abstract:Ang Li, Nengyang Zhao, Hao Wang, Xianghua Liu, Chenyang Liu, Yanyue Ding, Chao Qiu, Ruxue Wang, Aimin Wu Optical tunable delay lines (OTDLs) which can capture temporal optical signals, and overcome the challenge of halting light are crucial for ... [Opt. Express 32, 31809-31818 (2024)]

optics
Study of Silicon-on-glass Waveguides

LI Guang-bo,LONG Wen-hua,JIA Ke-miao,JIANG Xiao-qing,WANG Ming-hua,WANG Yue-lin,YANG Jian-yi

DOI: https://doi.org/10.3969/j.issn.1005-5630.2005.06.011

2005-01-01

Abstract:In this paper,a method to fabricate silicon-on-glass(SOG) materials for the applications of integrated optics and photonics is proposed.Anodic silicon-glass boning and selective etching are applied.Experiments and measurement show that the surface quality of SOG materials mainly depends on the used silicon-on-insulator(SOI) wafers.When the SIMOX-based SOI wafers are used,the RMS roughness of the SOG surface will be about 3 nm and the auto-correlation length will be about 100 nm.The propagation loss of the SOG-based rib waveguides is at the same level of the employed SOI materials.The SOG material have the capabilities of SOI materials and can also be used for the applications in which the lower interface of the silicon core can be processed or the lower cladding is required to be thick.
Third Order Silicon (si) Nitride Side-Walled Grating Using Silicon-on- Insulatir (SOI)

C. E. Png,S. T. Lim,E. P. Li,A. J. Danner

DOI: https://doi.org/10.1117/12.888579

2010-01-01

Abstract:In this work, we demonstrate three-dimensional (3D) simulations of a third order silicon-based grating with full-width-half-maximum (FWKM) reflection bandwidth of 4nm. This is more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented. In order to make this device active, we included an active element, to be inserted in the silicon layer by way of a pin layout. The device has a low power consumption of 114nW and its intrinsic device modulation speed is predicted to function at 40.5MHz.
Etched-Diffraction-Grating-Based Planar Waveguide Demultiplexer on Silicon-on-Insulator

Wenhui Wang,Yanzhe Tang,Yunxiang Wang,Hongchang Qu,Yaming Wu,Tie Li,Jianyi Yang,Yuelin Wang,Ming Liu

DOI: https://doi.org/10.1023/B:OQEL.0000025795.18597.c8

IF: 3

2004-01-01

Optical and Quantum Electronics

Abstract:An optical wavelength demultiplexer with the etched diffraction grating (EDG) on the silicon-on-insulator (SOI) material is demonstrated. Fabricated by the wet-anisotropic-etching method, 90° turning mirrors are used to bend waveguides, and the size of the EDG-based demultiplexer is minimized to only 16×2.5 mm 2 . The crosstalk is below −16 dB. The on-chip loss is about 9.97 dB, which is composed of about 8.72 dB excess loss and 1.25 dB diffraction loss. The polarization-dependent central wavelength shift is below 0.13 nm, and the polarization-dependent loss is about 0.35 dB. The sources of the crosstalk and loss are discussed in details, and the related measures to improve the performance are also presented.
High-speed compact silicon digital optical switch with slot structure

Simiao Xiao,Yubo Li,Yinlei Hao,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1016/j.ijleo.2010.06.027

IF: 3.1

2011-01-01

Optik

Abstract:A high-speed compact silicon digital optical switch (DOS) is proposed in this paper. The direct electro-optic effect is applied by filling electro-optic polymer in the void slot of the branches, which compensates the limitation of silicon itself. The crosstalk of about 35dB and the insertion loss of 0.7dB is obtained, the switching speed is less than 1ps, and the whole device length can be shortened to 616μm even using the basic mode-evolving principle and a simple Y-type structure. Analysis also shows that the device has good fabrication tolerance and wavelength independence over the C-band.
Turning-Mirror-Integrated Arrayed-Waveguide Gratings on Silicon-on-Insulator

Weiwei Zheng,Kemiao Jia,Simiao Xiao,Fan Wang,Guangbo Li,Yubo Li,Xiaoqing Jiang,Minghua Wang,Jianyi Yang

DOI: https://doi.org/10.1109/group4.2006.1708175

2006-01-01

Abstract:Optical demultiplexers employing the turning-mirror-integrated arrayed-waveguide grating (AWG) are demonstrated on the silicon-on-insulator material. Description of the design and fabrication procedures is provided. The sizes of the devices are effectively reduced while the performance are comparable with that of the conventional AWG that was fabricated on the same wafer. The adjacent and nonadjacent crosstalks are better than -19 dB and -23 dB, respectively, and the typical on-chip channel loss less than 8.8 dB
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
SOI Based Optical Waveguide Devices with 44gbit/s High Speed

Jinzhong Yu,Xi Xiao,Zhiyong Li,Zhongchao Fan,Kang Xiong,Hao Xu,Xianyao Li,Tao Chu,Yude Yu

DOI: https://doi.org/10.1364/iont.2012.ith3b.1

2012-01-01

Abstract:Research results for SOI optical modulator/switch, optical couplers in our group will be presented in the paper. Modulation speed of silicon MZI and MRR modulators with interleaved reverse PN junctions both achieve 44 Gbit/s, respectively. SOI optical couplers with 6 different structures have been developed, coupling efficiency of 65% has been obtained.
An Eight-Channel 400 GHz-Spacing Etched Diffraction Grating Multi/Demultiplexer on a Nanophotonic Silicon-on-Insulator Platform

shen ao,qiu chen,hu ting,xu chao,jiang xiaoqing,li yubo,yang jianyi

DOI: https://doi.org/10.1088/0256-307X/30/8/084204

2013-01-01

Chinese Physics Letters

Abstract:An eight-channel 400 GHz-spacing planar waveguide multi/demultiplexer employing etched diffraction grating is designed and fabricated on a silicon-on-insulator platform with a 220 nm thick top layer. The design parameters are optimized by scalar diffraction simulation to obtain optimal performance with a small footprint of only 0.75 mm(2). A bi-level adiabatic taper is used to connect the input/output waveguide and the slab waveguide so as to reduce the insertion loss and the broadening of the diffraction angle of the propagating light. The device is fabricated in a two-step process with E-beam lithography and dry etching, and the alignment accuracy is 10 nm or even better. Measurements show that the insertion loss is 7.35 dB and the crosstalk between adjacent channels is about -15 dB. Ways to improve the performance are also investigated in detail.
A Time Mode Pulse Interleaver in a Silicon-on-Insulator Platform for Optical Analog-to-Digital Converters

Donghe Tu,Zezheng Li,Yuxiang Yin,Huan Guan,Zhiguo Yu,Lifei Tian,Lei Jiang,Yuntao Li,Zhiyong Li,Zhongchao Fan

DOI: https://doi.org/10.3390/mi15030326

IF: 3.4

2024-02-28

Micromachines

Abstract:We propose and demonstrate a novel on-chip optical sampling pulse interleaver based on time mode interleaving. The designed pulse interleaver was fabricated on a 220 nm silicon-on-insulator (SOI) platform, utilizing only one S-shaped delay waveguide. Interleaving is achieved by the relative time delay between different optical modes in the waveguide, eliminating the need for any active tuning. The total length of the delay waveguide is 5620.5 μm, which is reduced by a factor of 46.3% compared with previously reported time-wavelength interleaver schemes. The experimental results indicate that the device can convert an optical pulse into a 40 GHz pulse sequence composed of four pulses with a root mean square (RMS) timing error of 0.9 ps, making it well suited for generating high-frequency sampling pulses for optical analog-to-digital converters.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Silicon-on-insulator-based Optical Demultiplexer Employing Turning-Mirror-integrated Arrayed-Waveguide Grating

KM Jia,WH Wang,YZ Tang,YR Yang,JY Yang,XQ Jiang,YM Wu,MH Wang,YL Wang

DOI: https://doi.org/10.1109/lpt.2004.839394

IF: 2.6

2005-01-01

IEEE Photonics Technology Letters

Abstract:In this letter, we demonstrate an optical demultiplexer on the silicon-on-insulator material employing the turning-mirror-integrated arrayed-waveguide grating (AWG). We substitute the bent waveguide array in the traditional AWG configuration by adopting the structure of the turning-mirror-integrated straight waveguides. Description of the design procedure is provided. The crosstalk of the fabricated 1/spl times/4 AWG is better than -23.1 dB. The typical on-chip insertion loss is about -8 dB and the output nonuniformity is less than 0.4 dB. The polarization-dependent central wavelength shift is about 0.068 nm.
Long Optical Delay Lines Enhanced by Ring Configuration in Optical Fibres

Dong Yong-Kang,Lu Zhi-Wei,Li Qiang,Gao Wei

DOI: https://doi.org/10.1088/0256-307x/24/6/043

2007-01-01

Chinese Physics Letters

Abstract:A long optically controlled delay line enhanced by ring configuration is demonstrated by using the group-velocity control of signal pulses based on stimulated Brillouin scattering. In experiment, two optical fibre ring cavities are used: one is used as the Brillouin laser, providing single-mode Stokes wave as probe wave; the other is used as the Brillouin amplifier, working as slow light medium. We achieve a maximum time delay of 215 ns using the ring Brillouin amplifier, five times larger than the input probe pulse width of 40 ns. In the meantime, a considerable pulse broadening is observed, which agrees well with the theoretical prediction based on linear theory.
Design of Narrow Channel Spacing Photonic Wire Awg on Soi with Three Stigmatic Points

Ren Bai,Ao Shen,Yubo Li,Yinlei Hao,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1117/12.869951

2010-01-01

Abstract:In this paper, an accurate Fourier Optics method of designing AWG demultiplexer based on high-index-contract Silicon-on-Insulator (SOI) materials is presented. The typical SOI photonic wire waveguide has a cross section of 400×340nm2 satisfying single-mode condition, and operating central wavelength is 1.5500μm. A three-stigmatic-points method is also applied in order to improve the accuracy, considering the aberration theory. Furthermore, our AWG has another important characteristic--the flat field of the output ports. In the example presented here, we design a 1×256 channel AWG with 0.1-nm channel spacing. The simulation result shows that the insert loss is almost 0dB for the central and peripheral output ports as well, representing a good uniformity. Meanwhile, the crosstalk to the adjacent channel is 14.4dB. Free spectral region (FSR) equals to 30nm as designed.

Spiral Optical Delay Lines In Silicon-On-Insulator

Performance comparison of integrated optical switching delay lines on three typical photonic integration pilot lines

Silicon-on-Insulator-Based Compact Optical Demultiplexer Employing Etched Diffraction Grating

Photonic Time-Wavelength Pulse Interleaver on Silicon

System Performances of On-Chip Silicon Microring Delay Line for RZ, CSRZ, RZ-DB and RZ-AMI Signals

Performance of a silicon-microring slow-light delay line for advanced modulation formats

Optical Signal Processing in SOI Waveguide Devices

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Rapid-calibration optical tunable delay line on 3-μm-thick SOI photonic platforms

Study of Silicon-on-glass Waveguides

Third Order Silicon (si) Nitride Side-Walled Grating Using Silicon-on- Insulatir (SOI)

Etched-Diffraction-Grating-Based Planar Waveguide Demultiplexer on Silicon-on-Insulator

High-speed compact silicon digital optical switch with slot structure

Turning-Mirror-Integrated Arrayed-Waveguide Gratings on Silicon-on-Insulator

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

SOI Based Optical Waveguide Devices with 44gbit/s High Speed

An Eight-Channel 400 GHz-Spacing Etched Diffraction Grating Multi/Demultiplexer on a Nanophotonic Silicon-on-Insulator Platform

A Time Mode Pulse Interleaver in a Silicon-on-Insulator Platform for Optical Analog-to-Digital Converters

Silicon-on-insulator-based Optical Demultiplexer Employing Turning-Mirror-integrated Arrayed-Waveguide Grating

Long Optical Delay Lines Enhanced by Ring Configuration in Optical Fibres

Design of Narrow Channel Spacing Photonic Wire Awg on Soi with Three Stigmatic Points