Abstract:A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores were found on the surface of the film, particularly no large holes were observable after improving the annealing process, and the improved solution-gelation (sol-gel) SiOx dielectric achieved a higher breakdown strength (1.6 MV/cm) and lower leakage current density (10-8 A/cm2 at 1.5 MV/cm). Consequently, a pentacene based OTFT with a high field effect mobility (~1.8 cm2/Vs), a low threshold voltage (-1.7 V), a steeper subthreshold slope (~0.4 V/dec) and a relatively high on/off ratio (~105) was fabricated by applying a hybrid gate insulator which consisted of improved sol-gel SiOx and polyvinyl phenol (PVP). This could be ascribed to both the high k of SiOx and the smoother, hydrophobic dielectric surface with low trap density, which was proved by atomic force microscopy (AFM) and a water contact angle test, respectively. Additionally, we systematically studied and evaluated the stability of devices in the compressed state. The devices based on dielectric fabricated by conventional sol-gel processes were more susceptible to the curvature. While the improved device presented an excellent mechanic strength, it could still function at the higher bending compression without a significant degradation in performance. Thus, this solution-process technology provides an effective approach to fabricate high-quality dielectric and offers great potential for low-cost, fast and portable organic electronic applications.

Low-Voltage Organic Thin-Film Transistors with Solution-Processed Hafnium Oxide and Polymer Dielectrics

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O As Gate Dielectric

High Performance Low-Voltage Organic Field-Effect Transistors Enabled by Solution Processed Alumina and Polymer Bilayer Dielectrics

Low-voltage high-performance C60 thin film transistors via low-surface-energy phosphonic acid monolayer/hafnium oxide hybrid dielectric

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

High-Performance Solution-Processed Low-Voltage Polymer Thin-Film Transistors with Low- $k$ /High- $k$ Bilayer Gate Dielectric

Flexible Low-Voltage Organic Thin-Film Transistors Enabled by Low-Temperature, Ambient Solution-Processable Inorganic/Organic Hybrid Gate Dielectrics

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

UV-directly Patternable Organic–inorganic Hybrid Composite Dielectrics for Organic Thin-Film Transistors

Achieving low-voltage operating high-mobility organic thin-film transistors by a multi-layered gate dielectric

Modulating Contact Properties by Molecular Layers in Organic Thin‐film Transistors

Highly Efficient All‐Solution‐Processed Low‐Voltage Organic Transistor with a Micrometer‐Thick Low‐k Polymer Gate Dielectric Layer

A Study on Organic Thin-Film Transistors Using Hf–La Oxides with Different La Contents As Gate Dielectrics

High-Performance Pentacene Thin-Film Transistor with High- $\kappa$ HfLaON As Gate Dielectric

Low-voltage organic field-effect transistors by using solution-processable high-κ inorganic-polymer hybrid dielectrics

Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates

Solution Processed Organic Thin-Film Transistors with Hybrid Low/High Voltage Operation

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric