Abstract:Sputtered Cu/Si thin films were experimentally prepared at different sputtering pressures and characterized using X-ray diffraction (XRD) and an atomic force microscope (AFM). Simultaneously, an application-oriented simulation approach for magnetron sputtering deposition was proposed in this work. In this integrated multiscale simulation, the sputtered atom transport was modeled using the Monte Carlo (MC) and molecular dynamics (MD) coupling method, and the deposition of sputtered atoms was simulated using the MD method. This application-oriented simulation approach was used to simulate the growth of Cu/Si(100) thin films at different sputtering pressures. The experimental results unveiled that, as the sputtering pressure decreased from 2 to 0.15 Pa, the surface roughness of Cu thin films gradually decreased; (111)-oriented grains were dominant in Cu thin films and the crystal quality of the Cu thin film was gradually improved. The simulation results were consistent with the experimental characterization results. The simulation results revealed that the transformation of the film growth mode from the Volmer-Weber growth mode to the two-dimensional layered growth mode resulted in a decrease in the surface roughness of Cu thin films; the increase in the amorphous compound CuSix and the hcp copper silicide with the decrease in the sputtering pressure was responsible for the improvement of the crystal quality of the Cu thin film. This work proposed a more realistic, integrated simulation scheme for magnetron sputtering deposition, providing theoretical guidance for the efficient preparation of high-quality sputtered films.

Effects Of Target-Substrate Distance On Structure And Residual Stress Of Cu/Si(100) Thin Films

Study on the Mechanism and Measurement of Stress of Tio2 and Sio2 Thin-Films

Effects of film thickness and microstructures on residual stress

Effects and Modulation Mechanism of Crystal Structure on Residual Stress of Cu Films Used for Metallization

Molecular Dynamics Simulation of Temperature Effects on Deposition of Cu Film on Si by Magnetron Sputtering

Combined effects of residual stress and microstructure on degradation of Cu thin films on Si

Structure and Stress of Cu Films Prepared by High Power Pulsed Magnetron Sputtering

On the Microcrystal Structure of Sputtered Cu Films Deposited on Si(100) Surfaces: Experiment and Integrated Multiscale Simulation

Scratch Behavior and FEM Modelling of Cu/Si(100) Thin Films Deposited by Modulated Pulsed Power Magnetron Sputtering

The Effects of Thickness on the Stress Properties of Sputtering Cu Films on Si Wafers

Interficial Stability of Cu/Cu(Ru)/Si Contact System for Barrier-Free Copper Metallization

Effect of Substrate on Surface Morphology Evolution of Cu Thin Films Deposited by Magnetron Sputtering

Effects of Substrate Temperature on the Stress Properties of Sputtering Cu Film on Si Wafer

Growth and Properties of Cu Thin Film Deposited on Si(001) Substrate: A Molecular Dynamics Simulation Study

Effects of Substrate Materials and Deposition Parameters on Film Stress

Molecular Dynamics Simulation of Deposition and Growth of Cu Thin Film on Si Substrate

Effect of Substrate Orientation on Critical Thickness of Cu Thin Films

Analysis of Low Frequency SiN Film on the Effect of Stress Level and Deposition Parameters

Effect of Chromium Dopant on Microstructure and Resistivity Characteristics of Cu/Si(100) Systems

Stress Analysis of Mo, MoSi 2 and Si Mono-Layer Thin Films and Multilayers Prepared by Magnetron Sputtering

Film thickness effect on texture and residual stress sign transition in sputtered TiN thin films