Effects of Substrate Materials and Deposition Parameters on Film Stress

Li Yuqiong,Yu Zhinong,Wang Huaqing,Lu Weiqiang,Xue Wei,Ding Zhao
DOI: https://doi.org/10.3788/aos20103002.0602
2010-01-01
Acta Optica Sinica
Abstract:An on-line thin film stress measuring system based on Hartmann-Shack sensor technique is introduced to measure the film stress of SiO_2, TiO_2, Ta_2O_5, Al_2O_3and ITO films at different thickness which are prepared by ion assisted deposition, and the effects of substrate materials and preparation parameters on the stresses of SiO_2 and TiO_2are investigated in details. The results show that the film stress as a function of the film thickness is linear in the initial stage of coating, and the film stress tends to be a stable value when the film thickness reaches a certain value. The thermal stress which resulted from the different coefficients of thermal between substrates and thin films can be diminished by choosing suitable substrates. In terms of TiO_2 films, the thermal stress plays a major role when the substrate temperature is below 150℃, but the compressive stress which resulted from the dense structure of films is dominant while the substrate temperature is above 150 ℃. However, the thermal stress in SiO_2 films is always dominant at different deposition temperatures. The tensile stress in SiO_2 films is mainly caused by the effects of ion assisted sputtering when the chamber pressure is below 1.7×10~(-2) Pa, and the tensile stress in SiO_2 films increases with the vacuum chamber's pressure increasing when it is above 1.7×10~(-2)Pa, but the refractive index decreases.
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