Abstract:A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm(2) V-1 s(-1), and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics.

Field Effect Transistors Based On Organic Semiconductors And Graphene

Partially-Screened Field Effect and Selective Carrier Injection at Organic Semiconductor / Graphene Heterointerface.

Polymeric Semiconductor/graphene Hybrid Field-Effect Transistors

Development of Organic Semiconductor for Field -effect Transistor

Planar Nanoscale Architecture for Organic Thin-Film Field-Effect Transistors

Progresses in Organic Field-Effect Transistors and Molecular Electronics

Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

High-Performance Photoresponsive Organic Nanotransistors with Single-Layer Graphenes as Two-Dimensional Electrodes

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

One-dimensional (1D) Micro/nanostructures of Organic Semiconductors for Field-Effect Transistors

Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials

Advances In Organic Field-Effect Transistors

Field-Effect Transistors Based on Two-Dimensional Materials for Logic Applications

Oriented Covalent Organic Framework Film on Graphene for Robust Ambipolar Vertical Organic Field-Effect Transistor

Organic Single Crystals or Crystalline Micro/Nanostructures: Preparation and Field-Effect Transistor Applications

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

Tuning Ambipolarity in a Polymer Field Effect Transistor using Graphene electrodes

Graphene/Fluoropolymer Hybrid Materials With Enhancement Of All Device Properties For Improved Field-Effect Transistors

Insight into High-Performance Conjugated Polymers for Organic Field-Effect Transistors

Low-voltage, High-performance Organic Field-Effect Transistors Based on 2D Crystalline Molecular Semiconductors

Advances in organic field-effect transistors and integrated circuits