Abstract:We have used a variety of laser wavelengths (365, 473, 633, 685, 730 nm) to produced porous silicon thin films by photochemically etching n-type Si in 48% HF in aqueous solution. Photoluminescence (PL) has been excited either with 365 or 473 nm light. We have observed the PL spectrum as a function of fabrication wavelength (λfab) and of exposure to the PL excitation laser. We demonstrate that the in situ peak PL emission wavelength (λpeak) depends on the fabrication laser wavelength for λfab≥473 nm and that the redder the λfab, the redder λpeak. For λfab≤473 nm we find λpeak≈550 nm. We have also found that post-growth exposure of a film to 365 or 473 nm light rapidly (on the order of 10 s) and continuously shifts λpeak to a saturation value of 530–550 nm where a steady state is reached. In addition, we have made simultaneous observations of the PL spectrum while a film is grown with λfab=365 or 473 nm. Detectable PL is first observed after ∼100 s. The peak then grows in intensity until a steady value is achieved. λpeak is found to vary little as the peak intensity grows. The observation that redder λfab leads to redder λpeak is consistent with the predictions of quantum confinement for fully hydrogen-terminated porous Si. When exposed to air, λpeak=670–700 nm irrespective of λfab. The latter result suggests that chemisorbed oxygen is important in determining λpeak of air-exposed films.

Raman Investigation with Excitation of Various Wavelength Lasers on Porous Silicon

Study of the Raman Peak Shift and the Linewidth of Light-Emitting Porous Silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Study on porous silicon on Si substrates by Raman and photoluminescence spectra

Raman Scattering Of Porous Structure Formed On C+-Implanted Silicon

Raman spectra and structure characteristics of P- porous silicon

Influence of Illumination of Raman Spectra of Porous Silicons

Optical Study of Photon-Trapped Porous Silicon Layer

Study of Photon-Trapping Phenomenon in Porous Silicon Layer

Raman-Spectra In A Broad Frequency Region Of P(-) Type Porous Silicon

EFFECT OF PHONON CONFINEMENT AND STRAIN ON RAMAN SPECTRAFROMLIGHT-EMITTING POROUS SILICON

Study on Residual in Porous Silicon

The Influence of Microstructure on Optical Properties of Porous Silicon

An Application of Raman Spectroscopy on the Measurement of Residual Stress in Porous Silicon

An Experimental Analysis of Residual Stress Measurements in Porous Silicon Using Micro-Raman Spectroscopy

Variability on Raman Shift to Stress Coefficient of Porous Silicon

Laser-Induced Fano Resonance Scattering in Silicon Nanowires

Laser-Excited Elastic Guided Waves Reveal the Complex Mechanics of Nanoporous Silicon

Liquid-Modulated Photothermal Phenomena in Porous Silicon Nanostructures Studied by μ-Raman Spectroscopy

Residual Stress On Surface And Cross-Section Of Porous Silicon Studied By Micro-Raman Spectroscopy

In situ photoluminescence studies of photochemically grown porous silicon