Abstract:Porous-Si samples were optically studied by using the photoluminescence, Raman scattering, the absolute reflectance and ellipsometry methods. Results show that the porous Si has low optical constants, and can trap more than 95% of the visible photons, but give no evidence of a strong interband transition existing in the visible region, especially at the 1.8-eV PL peak position, as suggested by the quantum size effect. The Lorentz oscillator and Bruggeman effective medium approximation (EMA) models were used in data analyses. Calculations indicate that if strong interband transition occurs, an optical structure can be recognized in the spectra, but it was not seen in the experiments. Therefore, a contradiction exists in the PL and optical absorption experiments. Except for other mechanisms, the calculations show that the layer dispersion effect may result in a shift of the luminescence peak for the porous Si. The 1.8-eV PL peak, not always shifted significantly but often seen with consistency in other material structures, strongly indicates the same origin of visible luminescence as those suggested in the literature. A possible mechanism for the luminescence and Raman enhancement as well as the photon trap phenomenon was discussed, and was attributed mainly to random multiple micro-reflections occurring in the porous-Si layer that has extremely large internal micro surfaces.

EFFECT OF PHONON CONFINEMENT AND STRAIN ON RAMAN SPECTRAFROMLIGHT-EMITTING POROUS SILICON

Study of the Raman Peak Shift and the Linewidth of Light-Emitting Porous Silicon

Stress field effects on phonon properties in spatially confined semiconductor nanostructures

Influence of Illumination of Raman Spectra of Porous Silicons

Modification of the phonon thermal conductivity in spatially confined semiconductor nanofilms under stress fields

Raman Spectral Study of Silicon Nanowires: High-order Scattering and Phonon Confinement Effects

Finite Size Effect on the Raman Frequency of Phonons in Nano-Semiconductors

Raman spectra of intrinsic and doped hydrogenated nanocrystalline silicon films

An Application of Raman Spectroscopy on the Measurement of Residual Stress in Porous Silicon

Raman Investigation with Excitation of Various Wavelength Lasers on Porous Silicon

Temperature Dependence of the First-Order Raman Scattering in Silicon Nanowires

Study of Photon-Trapping Phenomenon in Porous Silicon Layer

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Raman-Spectra In A Broad Frequency Region Of P(-) Type Porous Silicon

Study on porous silicon on Si substrates by Raman and photoluminescence spectra

Raman Spectra of Nanocrystalline Silicon Films

Optical Study of Photon-Trapped Porous Silicon Layer

Effect of Strain on the Lattice Vibrational Properties of PbSe

Raman Investigation of Silicon Nanocrystals: Quantum Confinement and Laser-Induced Thermal Effects

An Experimental Analysis of Residual Stress Measurements in Porous Silicon Using Micro-Raman Spectroscopy

MICRO-RAMAN SPECTROSCOPY AND ITS APPLICATIONS TO MEASURE RESIDUAL STRESS IN MICRO-STRUCTURE