Magnetization Switching Through Giant Spin–orbit Torque in a Magnetically Doped Topological Insulator Heterostructure
Yabin Fan,Pramey Upadhyaya,Xufeng Kou,Murong Lang,So Takei,Zhenxing Wang,Jianshi Tang,Liang He,Li-Te Chang,Mohammad Montazeri,Guoqiang Yu,Wanjun Jiang,Tianxiao Nie,Robert N. Schwartz,Yaroslav Tserkovnyak,Kang L. Wang
DOI: https://doi.org/10.1038/nmat3973
IF: 41.2
2014-01-01
Nature Materials
Abstract:Recent demonstrations of magnetization switching induced by in-plane current in heavy metal/ferromagnetic heterostructures (HMFHs) have drawn great interest to spin torques arising from the large spin-orbit coupling (SOC)...[1-3] in heavy metals. Considering the intrinsic strong SOC, topological insulators (TIs) are expected to be promising candidates for exploring spin-orbit torque (SOT)-related physics...[4, 5]. In this talk, we report the magnetization switching through giant SOT in the magnetically doped TI structures. In particular, we demonstrate the magnetization switching in a chromium-doped TI bilayer heterostructure, and the current induced SOT possibly has contribution from the spin-momentum locked surface states of TI. The critical current density for switching is below 8.9 × 104A/cm2 at 1.9 K. Moreover, we use second-harmonic methods to measure the spin torque efficiencies which are more than three orders of magnitude larger than those reported in heavy metals. The giant SOT and efficient current-induced magnetization switching exhibited by the bilayer heterostructure may lead to innovative spintronics applications such as ultralow power dissipation memory and logic devices.