Abstract:Electrical switching of magnetization through spin–orbit torque (SOT) induced by a composition gradient in single‐layer L10‐FePt has garnered considerable research interest owing to its inherent superior perpendicular magnetic anisotropy (PMA) that provides ultrahigh capacity to magnetic storage and memory devices. However, a large in‐plane external magnetic field is typically required to assist SOT‐driven switching, which is still a limitation for the practical application of L10‐FePt. This study reports realizable field‐free magnetization switching by SOT via Cr doping to form a single‐layer magnetic structure with an in‐plane magnetization component oriented toward L10‐FeCrPt [110] direction that strongly depends on the magnetocrystalline anisotropy. The Cr doping yields a considerable in‐plane exchange‐coupling effective field that is conducive toward disintegrating the rotational switching symmetry and facilitates field‐free switching in single‐layer films with PMA. Furthermore, this in‐plane effective field exhibits a nonmonotonic evolution with respect to the Cr‐doping concentration, which is validated using first‐principles calculation with a frustration‐based model of magnetic exchange interactions. Thus, this study delivers an attractive method to facilitate the field‐free electrical manipulations of magnetization in single‐layer ferromagnets to motivate innovative designs for advanced spintronics devices. A deterministic field‐free switching through bulk spin‐orbit torque is achieved in a perpendicular magnetized L10‐FeCrPt single layer. A considerable in‐plane exchange coupling effective field along the [110] orientation due to Cr doping is mainly responsible for the field‐free capability. This work provides a practical route for utilization of potential single‐layer magnetic materials in spin–orbit torque devices.

Current-Induced Magnetic Switching in an L10 FePt Single Layer with Large Perpendicular Anisotropy Through Spin–Orbit Torque

Magnetization Switching by Spin–Orbit Torque in L10-FePt and Ta/FePt Films with Large Perpendicular Magnetic Anisotropy

Electrical Switching of Perpendicular Magnetization in a Single Ferromagnetic Layer

Field-free spin–orbit torque switching in L 1 0 -FePt single layer with tilted anisotropy

Spin–orbit torque-assisted switching in magnetic insulator thin films with perpendicular magnetic anisotropy

Field‐Free Magnetization Switching Driven by Spin–Orbit Torque in L 1 0 ‐FeCrPt Single Layer

Bulk Spin Torque-Driven Perpendicular Magnetization Switching in L10 FePt Single Layer.

Bulk Spin Torque‐Driven Perpendicular Magnetization Switching in L10 FePt Single Layer

Field‐Free Magnetization Switching Driven by Spin–Orbit Torque in L10‐FeCrPt Single Layer

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Influence of Thickness on Current-Induced Magnetization Switching in L10-FePt Single Layer

Disorder dependent spin-orbit torques in L10 FePt single layer

In-Plane Current-Driven Spin-Orbit Torque Switching in Perpendicularly Magnetized Films with Enhanced Thermal Tolerance

Field free magnetization switching in perpendicularly magnetized Pt/Co/FeNi/Ta structure by spin orbit torque

Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer

Ultra-efficient spin-orbit torque induced magnetic switching in W/CoFeB/MgO structures.

Deterministic Magnetization Switching by Spin–orbit Torque in a Ferromagnet with Tilted Magnetic Anisotropy: A Macrospin Modeling

Field‐Free Spin‐Orbit Torque Switching in Perpendicularly Magnetized Ta/CoFeB/MgO/NiO/Ta with a Canted Antiferromagnetic Insulator NiO Interlayer

Perpendicular Magnetization Switching by Large Spin-Orbit Torques from Sputtered Bi2Te3

Enhanced Spin–orbit Torque Switching in Perpendicular Multilayers Via Interfacial Oxygen Tunability

Asymmetric Spin-Orbit-Torque-Induced Magnetization Switching with a Noncollinear In-Plane Assisting Magnetic Field