Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate

Jian Huang,Daqian Guo,Zhuo Deng,Huiyun Liu,Jiang Wu,Baile Chen

DOI: https://doi.org/10.1109/acp.2018.8595800

2018-01-01

Abstract:We present a GaAs based PiBN InAs/GaSb type II superlattice photodetector for mid infrared application with peak responsivity of 0.52A/W at 3.2um at 77K under 0V.

What problem does this paper attempt to address?

Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector with N-B-p Design Grown on GaAs Substrate

Zhuo Deng,Daqian Guo,Jian Huang,Huiyun Liu,Jiang Wu,Baile Chen

DOI: https://doi.org/10.1109/jqe.2019.2917946

IF: 2.5

2019-01-01

IEEE Journal of Quantum Electronics

Abstract:In this paper, we report the direct growth and characterization of a mid-wave infrared InAs/GaSb type-II superlattice n-B-p photodetector on a GaAs substrate. The design consists of an n-doped contact, a wide bandgap unipolar barrier, and a p-doped absorber, which uses photogenerated electron as minority carriers to enjoy the longer electron diffusion length compared with hole diffusion length. At 77 K, the device exhibits a dark current density of $2.9\times 10^{-5}$ A/cm2 under −0.1 V and a zero-bias differential-resistance-area product (R0A) in excess of $8\times 10^{3}~ \Omega \cdot \text {cm}^{2}$ . Arrhenius analysis of dark current demonstrates that the dominant mechanism is diffusion at a temperature higher than 130 K. 50% cutoff wavelength of the detector is found at $6.4~\mu \text{m}$ at 77 K under zero bias, with a peak responsivity of 0.56 A/W. The corresponding specific detectivity is $7.6\times 10^{11}~\text {cm}\cdot \text {Hz}^{1/2}$ /W. The key device parameters which limit the further optimization of performance are discussed.
GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

DK Sengupta,W Fang,JI Malin,J Li,T Horton,AP Curtis,KC Hsieh,SL Chuang,H Chen,M Feng,GE Stillman,L Li,HC Liu,KMSV Bandara,SD Gunapala,WI Wang

DOI: https://doi.org/10.1063/1.119473

IF: 4

1997-01-01

Applied Physics Letters

Abstract:In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP’s) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.
Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

Xu Qingqing,Chen Jianxin,Zhou Yi,Li Tianxing,Jin Jupeng,Lin Chun,He Li

2012-01-01

Infrared and Laser Engineering

Abstract:Infrared(IR) photo detectors based on InAs/GaSb type II superlattice have developed quickly in recent years.Many groups show great interest in InAs/GaSb superlattice detector for its superiors as high quantum efficient,high working temperature,high uniformity and low dark current densities.The growth of mid-wavelength infrared InAs/GaSb superlattice on GaSb substrates by molecular beam epitaxy(MBE) was studied.The growth temperature and the interface structures to obtain high quality material were optimized.The InAs/GaSb superlattice layers were characterized by atomic force microscope(AFM) and high resolution X-ray diffraction(XRD).Finally,highly lattice matched mid-infrared InAs/GaSb superlattice material was achieved.The FWHM of the 0th satellite peak of X-ray scanning curve is 28.8 arcsec.The p-i-n single IR photodiode based on InAs/GaSb superlattice has current responsivity of 0.48 A/W and blackbody detectivity of 4.54×1010 cmHz1/2W,and peak detectivity of 1.75×1011 cmHz1/2W at 77 K.
Growth and Fabrication of InAs/GaSb Type II Superlattice Mid-Wavelength Infrared Photodetectors

Jianxin Chen,Qingqing Xu,Yi Zhou,Jupeng Jin,Chun Lin,Li He

DOI: https://doi.org/10.1186/1556-276x-6-635

2011-01-01

Nanoscale Research Letters

Abstract:We report our recent work on the growth and fabrication of InAs/GaSb type II superlattice photodiode detectors. The superlattice consists of 9 monolayer InAs/12 monolayer GaSb in each period. Lattice mismatch between the GaSb substrate and the superlattice is 1.5 × 10-4. The full width at half maximum of the first-order satellite peak from X-ray diffraction is 28 arc sec. The P-I-N photodiodes in which the absorption regions (I regions) have 600 periods of superlattice show a 50% cutoff wavelength of 4.3 μm. The current responsivity was measured at 0.48 A/W from blackbody radiation. The peak detectivity of 1.75 × 1011 cmHz1/2/W and the quantum efficiency of 41% at 3.6 μm were obtained.PACS: 85.60.-q; 85.60.Gz; 85.35.-Be.
Demonstration of Si Based InAs/GaSb Type-Ii Superlattice P-I-n Photodetector

Zhuo Deng,Daqian Guo,Claudia Gonzalez Burguete,Zongheng Xie,Jian Huang,Huiyun Liu,Jiang Wu,Baile Chen

DOI: https://doi.org/10.1016/j.infrared.2019.06.011

IF: 2.997

2019-01-01

Infrared Physics & Technology

Abstract:In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photoluminescence measurements reveals a power coefficient of P~I0.74, indicating that defects related process is playing an important role in the predominant recombination channel for photogenerated carriers. At 70 K, the device exhibits a dark current density of 2.3 A/cm2 under -0.1 V bias. Arrhenius analysis of dark current shows activation energies much less than half of the active layer bandgap, which suggests that the device is mainly limited by surface leakage and defect-assisted tunneling, consistent with the photoluminescence analysis. The detector shows 50% cutoff wavelength at ~5.5 um at 70 K under bias of -0.1 V. The corresponding peak responsivity and specific detectivity are 1.2 A/W and 1.3*10e9 cm*Hz1/2/W, respectively. Based on these optoelectronics characterization results, reduction of defects by optimizing the III/V-Si interface, and suppression of surface leakage channels are argued to be the main factors for performance improvement in this Si-based T2SL detector towards low cost, large-format MWIR detection system on Si photonics platform.
InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Yan Liang,Wenguang Zhou,Xiangyu Zhang,Faran Chang,Nong Li,Yifan Shan,Ye Zhang,Fan Ye,Chuanbo Li,Xiangbin Su,Chengao Yang,Hongyue Hao,Guowei Wang,Dongwei Jiang,Donghai Wu,Haiqiao Ni,Yingqiang Xu,Zhichuan Niu,Youdou Zheng,Yi Shi

DOI: https://doi.org/10.1063/5.0223557

IF: 4

2024-01-01

Applied Physics Letters

Abstract:High-performance p-B-n infrared photodetectors based on In0.53Ga0.47As/Ga-0.51 As0.49Sb type-II superlattices with an Al0.85Ga0.15AsSb barrier on an InP substrate have been demonstrated. These photodetectors exhibit 50% and 100% cutoff wavelengths of similar to 2.1 mu m and similar to 2.6 mu m, respectively. At a bias voltage of -100 mV bias voltage, the device exhibits a peak responsivity of 0.618 A/W at 2.1 mu m, corresponding to a quantum efficiency of 36.5%. The device exhibits a saturated dark current shot noise limited specific detectivity (D*) of 4.12 x 10(10 )cmHz(1/2)/W (at a peak responsivity of 2.1 mu m) under -100 mV applied bias at 300 K.
Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

Fangfang Wang,Jianxin Chen,Zhicheng Xu,Yi Zhou,Qingqing Xu,Li He

DOI: https://doi.org/10.1117/12.2068276

2014-01-01

Abstract:InAs/GaSb superlattices are excellent candidates for the third-generation long-wave infrared and very-long-wave infrared photodetectors due to their special energy structure and theoretical advantages. To realize their inherent potential, however, superlattice materials with low defect density and improved device characteristics must be demonstrated. Here we report on the demonstration of high-performance PB pi N photodiodes based on type-II InAs/GaSb superlattices with full cut-off wavelength similar to 13.0 mu m operating at 77 K. Samples with migration-enhanced epitaxy for interface layers were grown by molecular beam epitaxy on GaSb substrates and characterized by high-resolution X-ray diffraction and atomic force microscopy. The FWHM of the 1st-order X-ray diffraction satellite peak of the absorption layers was only 21.6". The average roughness from AFM on a 2x2 mu m(2) scan area was less than 0.15 nm. Optical and electrical measurements of the photodiodes revealed high uniformity of the type-II superlattice materials. Across the wafer, the detector structure showed a full cut-off wavelength of 13.0 mu m at 77 K. The dark current density at -50 mV was 5.1x10(-4) A/cm(2) and the maximum resistance-area product (R(max)A) was 128.5 Omega cm(2).
Pbn Type Short-Wavelength Infrared Photodetector with an Ultralow Dark Current and Extended Wavelength Based on a Strained InGaAs/GaAsSb Superlattice.

Peng Cao,Matthew Bentley,Minghui You,Jiaqi Wei,Hongling Peng,Tiancai Wang,Chunxu Song,Qiandong Zhuang,Wanhua Zheng

DOI: https://doi.org/10.1364/ol.543761

IF: 3.6

2024-01-01

Optics Letters

Abstract:An InGaAs/GaAsSb type II superlattice (T2SL) absorber is a promising alternative material for a short-wavelength infrared (SWIR) photodetector due to the largely tunable bandgap by adjusting the thickness and material composition of InGaAs and GaAsSb in each T2SL period. We demonstrate a pBn type SWIR photodetector consisting of a strained InGaAs/GaAsSb T2SL absorber and AlGaAsSb barrier. The device presents an ultralow dark current density of 1.81 × 10-4 A/cm2 and a peak responsivity of 0.38 A/W under a reverse bias of -1 V at 300 K. The detector shows a peak detectivity of 1.62 × 1011 cm·Hz1/2/W and 4.63 × 1010 cm·Hz1/2/W under a reverse bias of -1 V at 260 K and 300 K, respectively. Moreover, our photodetector demonstrates an extended 100% cutoff wavelength response up to 2.2 μm.
Schematic of InAs/GaSb superlattice VLWIR photodide with PIN structure and the current responsivity spectrum of the SL photodiode. Interface optimization and fabrication of InAs/GaSb type II superlattice for very long wavelength infrared photodetectors

xiaochao li,dongwei jiang,yong zhang,liancheng zhao

DOI: https://doi.org/10.1016/j.spmi.2016.01.013

IF: 3.22

2016-01-01

Superlattices and Microstructures

Abstract:We developed a new strategy for the optimization of InSb interface properties of very long wavelength infrared InAs/GaSb superlattice. The superlattice structures with different InSb interface thickness were fabricated to optimize the strain balanced between the superlattice and GaSb substrate. The SL structure containing 16 ML InAs/7 ML GaSb with the InSb interface layer thickness of 0.9 ML in each period shows the smallest stain of +0.065% and full width half maximum (FWHM) of the 1st order peaks of 24 arcsec. We also demonstrated the InAs/GaSb photodiodes with PIN structure operating at 77 K. The photodiodes have a 50% cutoff wavelength of 14.4 μm. The peak responsivity of the devices at zero bias is about 0.54 A/W at12.1 μm leading to the external quantum efficiency of 5.5%. With the R0A of 0.126 Ωcm2, the device has a Johnson noise limited D* of 2.94 × 109 cmHz1/2W−1 at 77 K under zero bias.
High Performance InAs/GaSb Superlattice Long Wavelength Photodetectors Based on Barrier Enhanced Structures

Zhou Yi,Chen Jianxin,Wang Fangfang,Xu Zhicheng,Bai Zhizhong,Jin Chuan,He Li

DOI: https://doi.org/10.1117/12.2180425

2015-01-01

Abstract:The barrier enhanced InAs/GaSb long wavelength photodetectors were designed and demonstrated in this paper. A PBIN detector with an electron barrier inserted between P type contactor and absorption region show significantly improved electrical performances compared to a PIN structure. The RmaxA product of the PBIN detector was measured to be 104 Ωcm2 at 80K and 7360 Ωcm2 at 50K. Temperature dependent measurements show that the tunneling currents dominate the dark current below 50K, the generation-recombination (GR) currents dominate from 50K to 90K, and the diffusion current dominate over 90K. The PBIN structure benefits from a lower electric field in the absorption region and therefore, suppressed the tunnel currents and GR currents. To improve the quantum efficiency, Be-doping was employed to convert the conductivity of the long wavelength SL structure, the PN junction moves away from the B-I hetrostructure to the π-N interface, which loses the barrier effect. Therefore, the hole barrier was needed to form a PBπBN structure. In this paper, hole barrier was designed without Al element to form a PBπBN structure. The RmaxA product of the PBπBN detector was measured to be 77 Ωcm2 and the dark current density under -0.05V bias was measured to be 8.8×10-4A/cm2 at 80K. The peak current responsivity at 9.8 μm was 2.15A/W and the quantum efficiency was 26.7%.
High Operation Temperature Mid-Wavelength Interband Cascade Infrared Photodetectors Grown On Inas Substrate

Yi Zhou,Jianxin Chen,Zhicheng Xu,Li He

DOI: https://doi.org/10.1117/12.2225131

2016-01-01

Abstract:In recent years, interband cascade detectors (ICIP) based on typer-II superlattice have shown great performance potential at high operation temperature. In this paper, we report our studies on mid-infrared interband cascade photodetectors first grown on InAs substrate. We examined the photo-generated carriers' transport in ICIP structures by comparing three detectors grown on InAs substrate. The 2-stages ICIP device has demonstrated a high quantum efficiency around 20% at room temperature. The dark current density of the 2-stages ICIP device at -0.05V is as low as 1 nA at 80K, 1 mA at 150K, which is comparable to the state of art PIN super lattice photo detectors with similar cutoff wavelength. The Johnson-noise limited D* reaches 1.64 x 10(14) cm. Hz(1/2)/W at 3.65 mu m and 80K, and 4.1 x 10(10)cm. Hz(1/2)/W at 3.8 mu m and 200K. The 300 K background limited infrared performance (BLIP) operation temperature is estimated to be over 140 K.
High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

Qi Yuan,Chuang Li,Daqian Guo,Xinyue Cui,Xingyu Tang,Kai Shen,Jiang Wu,Zhiming Wang

DOI: https://doi.org/10.1109/ted.2023.3256965

IF: 3.1

2023-04-25

IEEE Transactions on Electron Devices

Abstract:Due to the short carrier diffusion length, the extraction of photogenerated carriers is one of the key issues in InAs/GaSb superlattice (SL) photodetectors. Here, we report a midinfrared InAs/GaSb SL absorber with a stepped band alignment. The stepped absorber facilitates a better carrier extraction efficiency. Simulation results show that the proposed nBn detector with a stepped absorber exhibited a substantial performance improvement over the nBn detectors with uniform absorbers. At 150 K, the detector with a 3.6- -thick stepped absorber has a maximum quantum efficiency (QE) of 46%, which is about 16% higher than that of the detectors with uniform absorbers. The maximum specific detectivity reached cm Hz /W at 4.9 under −0.2 V bias. With the enhanced carrier extraction efficiency, the detectivity can gained a further improvement with a thicker stepped absorber, unlike the detector with a uniform absorber where the detectivity deteriorated with the absorber thickness increased from 3.6 to .

engineering, electrical & electronic,physics, applied
High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

Zhicheng Xu,Jianxin Chen,Fangfang Wang,Yi Zhou,Li He

DOI: https://doi.org/10.1088/1361-6641/aa6377

IF: 2.048

2017-01-01

Semiconductor Science and Technology

Abstract:We demonstrated high performance long wavelength InAs/GaAs0.09Sb0.91 type-II superlattices infrared photo-detectors grown on InAs substrates. Superlattices photodiodes with InAs layer thickness from 14 to 24 ML showed 50% cutoff wavelength from 6 to 12.5 μm while the lattice-mismatch was kept smaller than 4.0 × 10−4 without any additional interface layers for strain balance. Quantum efficiency spectra showed oscillating characteristics which were attributed to the plasma effect in the highly doped InAs buffer layers. The absorption coefficient of 1800 cm−1 and diffusion length of 10 μm of minority carriers in the SLs on InAs have been obtained through simulation. A photodiode exhibited a 12.5 μm cutoff wavelength with a peak detectivity of 7.4 × 1010 cm Hz1/2 W−1 and 2.6 × 1011 cm Hz1/2 W−1 at 76 K and 52 K, respectively.
Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate

Masaki Sato,Hiroshi Inada,Hiroshi Obi,Hiroki Mori,Takuma Fuyuki,Sundararajan Balasekaran,Daisuke Kimura,Kenichi Machinaga,Yasuhiro Iguchi,Yasuhiro Muramatsu,Hiroshi Murofushi,Masahiko Sano,Junichi Kudo,Michiya Kibe,Masatoshi Koyama

DOI: https://doi.org/10.1016/j.infrared.2024.105133

IF: 2.997

2024-01-12

Infrared Physics & Technology

Abstract:We report the growth and characterization of band gap engineered mid-wavelength infrared photodiode, pBiBn, based on type-II InAs/GaSb superlattices on InP substrate. InP substrates are attractive material because they have high transmittance in the mid-wavelength infrared region and near thermal expansion coefficient to Si read-out IC (ROIC). Misfit dislocations due to lattice mismatch between GaSb and InP were successfully suppressed by thick GaSb buffer layer and two step growth of it. The photoluminescence (PL) spectrum from the absorption layers exhibits a peak wavelength of 5.01 μm at 77 K. The distinct PL peak was observed even at 120 K, indicating the excellent crystalline quality of T2SLs grown on an InP substrate. The dark current densities of 292 × 10 −6 A/cm 2 at 77 K and cut off wavelength of 5.15 μm at 80 K were measured, respectively. A clear image was obtained by fabricated focal plane array of 640 × 512 pixels with 15 μm pixel pitch, and NEDT and defective pixel rate was 50 mK and less than 1 % at 100 K, respectively.

optics,physics, applied,instruments & instrumentation
High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

A. M. Hoang,G. Chen,R. Chevallier,A. Haddadi,M. Razeghi

DOI: https://doi.org/10.1063/1.4884947

IF: 4

2014-06-23

Applied Physics Letters

Abstract:Very long wavelength infrared photodetectors based on InAs/InAsSb type-II superlattices are demonstrated on GaSb substrate. A heterostructure photodiode was grown with 50% cut-off wavelength of 14.6 μm. At 77 K, the photodiode exhibited a peak responsivity of 4.8 A/W, corresponding to a quantum efficiency of 46% at −300 mV bias voltage from front side illumination without antireflective coating. With the dark current density of 0.7 A/cm2, it provided a specific detectivity of 1.4 × 1010 Jones. The device performance was investigated as a function of operating temperature, revealing a very stable optical response and a background limited performance below 50 K.

physics, applied
Molecular Beam Epitaxy Growth and Characteristics of the High Quantum Efficiency InAs/GaSb Type-Ii Superlattices MWIR Detector

Chen Kai-Hao,Xu Zhi-Cheng,Liang Zhao-Ming,Zhu Yi-Hong,Chen Jian-Xin,He Li

DOI: https://doi.org/10.11972/j.issn.1001-9014.2021.03.001

2021-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:A very high quantum efficiency InAs/GaSb T2SL mid-wavelength infrared (MWIR) photodetector has been grown by molecular beam epitaxy (MBE). The T2SL detector structure material exhibited smooth surface with step-flow growth and excellent structural homogeneity. The 50% cut-off wavelength was about 5.5 mu m. The peak current responsivity was 2.6 A/W corresponding to a quantum efficiency over 80% at 77 K,which was comparable to that of MCT. At 77 K,the dark current density at -50 mV bias was 1.8x10(-6) A/cm(2) and the resistance-area product (RA) at maximum (-50 mV bias) was 3.8x10(5) Omega.cm(2). The peak detectivity was calculated to be 6.1 x 10(12) cm Hz(1/2)/W.
Inas-Based Type-Ii Superlattice Long Wavelength Photodetectors

Fangfang Wang,Jianxin Chen,Zhicheng Xu,Yi Zhou,Li He

DOI: https://doi.org/10.1117/12.2209424

2016-01-01

Abstract:We report on the performance of long wavelength infrared type-II InAs-based InAs/GaAsSb superlattice photodiodes grown by molecular-beam epitaxy. The detectors had a 100% cutoff wavelength of similar to 9.7 mu m and a peak current responsivity of 2.16 A/W at 80 K. The dark current density at -50 mV bias was 6.4x10(-4) A/cm(2) and the resistance-area product at zero bias (R(0)A) was 36.9 Omega cm(2). The black body detectivity and peak detectivity were 7.5x10(10) cm Hz(1/2)/W and 1.97x10(11) cm Hz(1/2)/W, respectively. The quantum efficiency at 7.6 mu m was measured to be similar to 34%. Good agreement was achieved between the measured I-V curves and the simulated ones, and between the experimental and theoretically predicted differential resistance values. At temperatures exceeding 75 K diffusion currents dominate the device performance. In the temperature range between 65 and 75 K, the performance of the InAs-based SL photodiodes is limited by GR processes. Trap-assisted tunneling current provides a significant contribution at temperatures below 65 K, while coherent tunneling currents are not of importance.
Mid-wavelength Nbn Photodetector with High Operating Temperature and Low Dark Current Based on InAs/InAsSb Superlattice Absorber

Peng Cao,Tiancai Wang,Hongling Peng,Zhanguo Li,Qiandong Zhuang,Wanhua Zheng

DOI: https://doi.org/10.3788/col202422.012502

IF: 2.56

2024-01-01

Chinese Optics Letters

Abstract:In this paper, we demonstrate nBn InAs/InAsSb type II superlattice (T2SL) photodetectors with AlAsSb as the barrier that targets mid -wavelength infrared (MWIR) detection. To improve operating temperature and suppress dark current, a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO2 layer. These result in ultralow dark current density of 6.28 x 10-6 A/cm2 and 0.31 A/cm2 under -600 mV at 97 K and 297 K, respectively, which is lower than most reported InAs/InAsSb-based MWIR photodetectors. Corresponding resistance area product values of 3.20 x 104 omega center dot cm2 and 1.32 omega center dot cm2 were obtained at 97 K and 297 K. A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5 mu m and a peak detectivity of 2.1 x 109 cm center dot Hz1/2/W were obtained at a high operating temperature up to 237 K.
Mid-Wave Infrared High-Speed InAs/GaSb Superlattice Uni-Traveling Carrier Photodetector

Zhijian Shen,Jinshan Yao,Hong Lu,Baile Chen

DOI: https://doi.org/10.1109/oecc56963.2023.10209925

2023-01-01

Abstract:We present a UTC-structured high-speed InAs/GaSb T2SL MWIR PD. At 300K, The device has a 4.2 $\mu \mathrm{m}$ zero-bias responsivity of 0.24 A/W and a 4.54 GHz 3-dB bandwidth at -5V.
InP-Based Extended-Short Wave Infrared Heterojunction Phototransistor

Zongheng Xie,Zhuo Deng,Jian Huang,Zhiyang Xie,Zhiqi Zhou,Baile Chen

DOI: https://doi.org/10.1109/jlt.2021.3076238

IF: 4.7

2021-07-01

Journal of Lightwave Technology

Abstract:In this paper, we report an InP-based extended-short wave infrared (e-SWIR) phototransistor with InGaAsGaAsSb type-II superlattices (T2SLs) as the absorber. Monolithic growth of the phototransistor on InP substrate enjoys several benefits such as the lattice matching property and convenient bandgap engineering of the InPInGaAsGaAsSb material system. At room temperature, the device exhibits a dark current density of 4.57Acm2 under 0.8 V bias, and the responsivity at 2m saturates at around 86AW. The corresponding thermal and shot noise limited specific detectivity is 6.591010cmHz12W. The frequency response of the device is also measured by illuminating the device with a 2m modulated laser. The device shows a 10 to 90 rise time of 44.2 ns. These characterization results suggest the high gain phototransistor with InGaAsGaAsSb T2SLs on InP substrate is a promising candidate for e-SWIR applications.

engineering, electrical & electronic,optics,telecommunications

Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate

Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector with N-B-p Design Grown on GaAs Substrate

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

Growth and Fabrication of InAs/GaSb Type II Superlattice Mid-Wavelength Infrared Photodetectors

Demonstration of Si Based InAs/GaSb Type-Ii Superlattice P-I-n Photodetector

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

Pbn Type Short-Wavelength Infrared Photodetector with an Ultralow Dark Current and Extended Wavelength Based on a Strained InGaAs/GaAsSb Superlattice.

Schematic of InAs/GaSb superlattice VLWIR photodide with PIN structure and the current responsivity spectrum of the SL photodiode. Interface optimization and fabrication of InAs/GaSb type II superlattice for very long wavelength infrared photodetectors

High Performance InAs/GaSb Superlattice Long Wavelength Photodetectors Based on Barrier Enhanced Structures

High Operation Temperature Mid-Wavelength Interband Cascade Infrared Photodetectors Grown On Inas Substrate

High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

Molecular Beam Epitaxy Growth and Characteristics of the High Quantum Efficiency InAs/GaSb Type-Ii Superlattices MWIR Detector

Inas-Based Type-Ii Superlattice Long Wavelength Photodetectors

Mid-wavelength Nbn Photodetector with High Operating Temperature and Low Dark Current Based on InAs/InAsSb Superlattice Absorber

Mid-Wave Infrared High-Speed InAs/GaSb Superlattice Uni-Traveling Carrier Photodetector

InP-Based Extended-Short Wave Infrared Heterojunction Phototransistor