Abstract:In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photoluminescence measurements reveals a power coefficient of P~I0.74, indicating that defects related process is playing an important role in the predominant recombination channel for photogenerated carriers. At 70 K, the device exhibits a dark current density of 2.3 A/cm2 under -0.1 V bias. Arrhenius analysis of dark current shows activation energies much less than half of the active layer bandgap, which suggests that the device is mainly limited by surface leakage and defect-assisted tunneling, consistent with the photoluminescence analysis. The detector shows 50% cutoff wavelength at ~5.5 um at 70 K under bias of -0.1 V. The corresponding peak responsivity and specific detectivity are 1.2 A/W and 1.3*10e9 cm*Hz1/2/W, respectively. Based on these optoelectronics characterization results, reduction of defects by optimizing the III/V-Si interface, and suppression of surface leakage channels are argued to be the main factors for performance improvement in this Si-based T2SL detector towards low cost, large-format MWIR detection system on Si photonics platform.

Pbn Type Short-Wavelength Infrared Photodetector with an Ultralow Dark Current and Extended Wavelength Based on a Strained InGaAs/GaAsSb Superlattice.

Mid-wavelength Nbn Photodetector with High Operating Temperature and Low Dark Current Based on InAs/InAsSb Superlattice Absorber

InP-based High-Performance Extended Short Wavelength P-B-n Infrared Photodetector with InGaAs/GaAsSb Type-Ii Superlattice Absorption Layer

Mid-Wave Infrared InAs/GaSb Type-II Superlattice Photodetector with N-B-p Design Grown on GaAs Substrate

InAs/GaSb Type-II superlattice (T2SL) photodetector operating in the very-long wavelength infrared (VLWIR) spectral domain

Inas-Based Type-Ii Superlattice Long Wavelength Photodetectors

InP-Based Extended-Short Wave Infrared Heterojunction Phototransistor

Schematic of InAs/GaSb superlattice VLWIR photodide with PIN structure and the current responsivity spectrum of the SL photodiode. Interface optimization and fabrication of InAs/GaSb type II superlattice for very long wavelength infrared photodetectors

Multistep InAs/InAsSb Staircase Nbn Long-Wavelength Infrared Detectors with Enhanced Charge Carrier Transport

InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

Long and Very Long Wavelength InAs/InAsSb Superlattice Complementary Barrier Infrared Detectors

Low dark current Sb-based short-wavelength infrared photodetector

Electrical and Optical Performances of Ingaas/Gaassb Superlattice Short-Wavelength Infrared Detectors

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber

High Performance InAs/GaAsSb Superlattice Long Wavelength Infrared Photo-Detectors Grown on InAs Substrates

MBE growth of mid-wavelength type II InAs/InAsSb superlattice photodetectors with wet etching and Al 2 O 3 passivation

Demonstration of Si Based InAs/GaSb Type-Ii Superlattice P-I-n Photodetector

Mid-wavelength infrared InAs/GaSb type Ⅱ superlattice detectors

Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection