Abstract:Ensuring the reliability of integrated circuits (ICs) has been a great challenge with the increasing complexity of the electromagnetic environment. On this basis, the fast-rising-edge electromagnetic pulse (EMP)- induced trap-assisted tunneling (TAT) effect is investigated by simulation and experiments of CMOS digital inverters. A detailed mechanism analysis is performed to explain the physical damage process. The EMP-induced field derives traps and leakage current in the oxide, which induces output degradation and thermal failure in the device. A theoretical model of degradation and failure is established to describe the dependency of the output deterioration and the heat accumulation on the EMP resulting signal features. The temperature distribution function is derived from the heat conduction equation in the semiconductor. Corresponding experiments performed based on the TLP test system substantiate the emerging performance deterioration, which is in agreement with the mechanism analysis. Simulated results from the Sentaurus TCAD indicate that EMP resulting voltage-induced damage is caused by the TAT current path occurring in the gate oxide, revealing the location susceptible to burnout. In addition, the dependency of the device failure on the pulse rising time is discussed. The mechanism analysis in this paper facilitates reinforcing the design and promotes EMP reliability research on other semiconductor devices, and the study contributes to the enhancement of EMP robustness in CMOS digital ICs.

Mechanism Analysis and Thermal Damage Prediction of High-Power Microwave Radiated CMOS Circuits

Modeling and Understanding of the Thermal Failure Induced by High Power Microwave in CMOS Inverter

An Electro-Thermal Analysis of Lateral Double-diffused MOSFET(LDMOS) Using FEM

Analysis of Electro-Thermal-Stress Failure of the Ldmos Fet under Hpm Pulses

Electro-Thermal-Stress analysis of a LDMOS FET Breakdown under High Power Microwave pulses

Upset and Damage Mechanisms of the Three-Dimensional Silicon Device Induced by High Power Microwave Interference.

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Damage characteristics and physical mechanism of the CMOS inverter under fast-rising-edge electromagnetic pulse

Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

C Band Microwave Damage Characteristics of Pseudomorphic High Electron Mobility Transistor*

Investigation on Latch-Up Susceptibility Induced by High-Power Microwave in Complementary Metal–oxide–semiconductor Inverter

Modeling and Analysis of the Hpm Pulse-Width Upset Effect on Cmos Inverter

EXPERIMENTAL STUDY AND SPICE SIMULATION OF CMOS INVERTERS LATCH-UP EFFECTS DUE TO HIGH POWER MICROWAVE INTERFERENCE

Analysis of high power microwave induced degradation and damage effects in AlGaAs/InGaAs pHEMTs

Temperature Dependence of Latch-Up Effects in CMOS Inverter Induced by High Power Microwave

Theoretical models for microwave pulse induced thermal failure in CMOS integrated circuits

A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects

Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation

Time-Varying Cumulative Damage Recursive Method for Power Semiconductor Devices

Study on the Degradation Mechanism of GaN MMIC Power Amplifiers under On-State with High Drain Bias

Theoretical modeling of effect of pulse width on microwave pulse triggered internal transient latch-up in CMOS inverters