Abstract:This work demonstrates a piezoelectric d33 increase from 11.6 to 115.6 pC N‐1 (highest reported) by inducing porosity in ZnO thin films by oblique angle deposition. The morphological and structural characterization for standard and inclined films shows the tuning of the crystalline c‐axis angle (γ) as a function of the columnar inclination angle (β). Piezoceramics have been the common choice for sensing applications, however their integration with other electronics is limited due to their large size. Also, environmental concerns have been limiting the use of ceramics due to their lead content, toxic for humans. Piezoelectric crystalline thin films have arisen as alternative materials offering compatibility with miniaturization and integrated processes, though their piezoelectric properties are low (d33 300 pC N−1), hindering their applicability. Several methods have been studied aiming to improve the piezoelectric output of thin films, including doping or the less investigated inclusion of porosity. However, they all require complex techniques that increase the cost. In this work, a giant electromechanical d33 coefficient of 115.6 pC N−1 has been obtained inducing porosity in inclined ZnO thin films via oblique angle deposition, which is beyond record values reported for doped ZnO thin films and an order of magnitude higher than standard ZnO thin films (11.6 pC N−1). Morphology, composition, crystal structure, porosity, and piezoelectricity are reported for standard and inclined films. Finite element simulations have been carried out to investigate the performance of the piezoelectric‐enhanced thin films in an ultrasonic pulse‐echo setup.

V-doped ZnO thin-film material with large piezoelectric constant and high resistivity

ZnO thin membrane with large piezoelectric constant and high resistivity

Giant Piezoelectric D33 Coefficient in Ferroelectric Vanadium Doped ZnO Films

Large Enhancement of Energy Storage Density in (pb0.92la0.08)(zr0.65ti0.35)o3/pbzro3 Multilayer Thin Film

High-Concentration F-Incorporated Zno Thin Films Doped Via Femtosecond-Laser Hyperdoping

Microstructure and Properties of Cu-Doped Zno Films Prepared by Dc Reactive Magnetron Sputtering

V-Doped Zno Thin Films Prepared by Rf Magnetron Sputtering

Giant Piezoelectric Properties of ZnO Film Doped with Acceptor-Donor Ionic Pair

The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

Giant Piezoelectric Effect Induced by Porosity in Inclined ZnO Thin Films

Multiferroic and Piezoelectric Behavior of Transition-Metal Doped ZnO Films

Ferroelectric ZnO thin film doped with V and preparation method thereof

Large Linear Electrostrain of Acceptor-Donor Co-doped ZnO Films

Sol–gel derived (Li, Mg): ZnO films with high c-axis orientation and electrical resistivity

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

The Fabrication of Vanadium-Doped ZnO Piezoelectric Nanofiber by Electrospinning

V 5 + Ionic Displacement Induced Ferroelectric Behavior in V-doped ZnO Films

Enhanced Electromechanical Response of Fe-doped ZnO Films by Modulating the Chemical State and Ionic Size of the Fe Dopant

Strong piezoelectricity of the nm-thick flexible Hf0.5Zr0.5O2 ferroelectric film

Thickness-Dependent Monoclinic Phases and Piezoelectric Properties Observed in Polycrystalline (pb0.94la0.04)(zr0.60ti0.40)o3 Thin Films