Enhanced Ferroelectric Properties and Insulator–Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VO x -Capped Hf 0.5 Zr 0.5 O 2 Thin Films
Yan Zhang,Zhen Fan,Dao Wang,Jiali Wang,Zhengmiao Zou,Yushan Li,Qiang Li,Ruiqiang Tao,Deyang Chen,Min Zeng,Xingsen Gao,Jiyan Dai,Guofu Zhou,Xubing Lu,Jun-Ming Liu
DOI: https://doi.org/10.1021/acsami.0c10964
2020-08-12
Abstract:A capping layer is known to be critical for stabilizing the ferroelectric (FE) orthorhombic phase (o-phase) in a HfO<sub>2</sub>-based thin film. Here, vanadium oxide (VO<i><sub>x</sub></i>), a functional oxide exhibiting the insulator–metal transition, is used as a novel type of a capping layer for the Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) thin film. It is demonstrated that the VO<i><sub>x</sub></i> capping layer (VCL) can enhance the FE properties of the HZO thin film comprehensively. Specifically, the HZO thin film with a VCL shows large remanent polarization (2<i>P</i><sub>r</sub> ≈36.9 μC/cm<sup>2</sup>), relatively small coercive field (<i>E</i><sub>c</sub> ≈1.09 MV/cm), high endurance (up to 10<sup>9</sup> cycles), and long retention (>10<sup>5</sup> seconds). The enhanced FE properties may be attributed to the VCL-induced stabilization of the FE o-phase and suppression of oxygen vacancies at the interface. Furthermore, the HZO thin film with a VCL exhibits a successive rightward shift of polarization-voltage (<i>P-V</i>) hysteresis loop as the temperature increases. This is well correlated with the insulator–metal transition in a VCL, which can modulate the interfacial built-in field and thus cause the <i>P-V</i> loop shift. It is therefore demonstrated that a VCL not only enhances the FE properties of HZO thin films but also provides a temperature degree of freedom to modulate the FE properties, which may open up a new pathway to develop HfO<sub>2</sub>-based FE memories with high performance and novel functionalities.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c10964?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c10964</a>.Schematic synthesis process of the VO<i><sub>x</sub></i> precursor; XRR curves and XPS spectra of the VO<i><sub>x</sub></i> layer; method to estimate the grain size; PFM phase and amplitude hysteresis loops; domain orientations in the as-grown HZO/0 and HZO/VO<i><sub>s</sub></i>-1.67 samples; FE properties of 10 nm HZO films with and without VCLs; temperature-dependent <i>C</i>–<i>V</i> and <i>I</i>–<i>V</i> characteristics; <i>P</i>−<i>V</i> hysteresis loops in a heating/cooling cycle, and fittings of <i>I</i>–<i>V</i> characteristics (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c10964/suppl_file/am0c10964_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology