Abstract:Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi 2 N 4

Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi$_2$N$_4$

MoSi2N4: An emerging 2D electronic material with protected band edge states and dielectric tunable quasiparticle and optical properties

Electronic Properties and Quasi-Particle Model of Monolayer MoSi_2N_4

MoSi2N4/WO2 Van Der Waals Heterostructure: Theoretical Prediction of an Effective Strategy to Boost MoSi2N4′s Nanoelectronic and Optoelectronic Applications

Novel Two-Dimensional Layered MoSi2Z4 (Z = P, As): New Promising Optoelectronic Materials

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

First-principle calculation study of intrinsic point defects and doping performance of MoSi 2 N 4

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

Two-Dimensional Electron Gas in MoSi2N4/VSi2N4 Heterojunction by First Principles Calculation

Structure and Electronic Properties of MoSi2P4 Monolayer

Two-dimensional electron gas in MoSi<sub>2</sub>N<sub>4</sub>/VSi<sub>2</sub>N<sub>4</sub> heterojunction from first principles

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

Efficient Ohmic contacts and built-in atomic sublayer protection in MoSi2N4 and WSi2N4 monolayers

Tunable spin polarization and electronic structure of bottom-up synthesized MoSi$_2$N$_4$ materials

Composition-dependent absorption of radiation in semiconducting MSi2Z4 Monolayers

Evaluating the Quantum Confinement Effects Modulating Exciton and Electronic Band Structures of Two-Dimensional Layered MoSSe Films and Their Photodetection Potentials

MoSi2N4 single-layer: a novel two-dimensional material with outstanding mechanical, thermal, electronic, optical, and photocatalytic properties

Theoretical prediction of the electronic structure, optical properties and contact characteristics of type-I MoS2/MoGe2N4 heterostructure towards optoelectronic devices

First-principles insights of electronic properties of Blue Phosphorus/MoSi2N4 van der Waals heterostructure via vertical electric field and biaxial strain

A dielectric-defined lateral heterojunction in a monolayer semiconductor