Abstract:Thermal transport properties bear a pivotal role in influencing the performance of phase change memory (PCM) devices, in which the PCM operation involves fast and reversible phase change between amorphous and crystalline phases. In this paper, we present a systematic experimental and theoretical study on the thermal conductivity of GeTe at high temperatures involving fast change from amorphous to crystalline phase upon heating. Modulated photothermal radiometry (MPTR) is used to experimentally determine thermal conductivity of GeTe at high temperatures in both amorphous and crystalline phases. Thermal boundary resistances are accurately taken into account for experimental consideration. To develop a concrete understanding of the underlying physical mechanism, rigorous and in-depth theoretical exercises are carried out. For this, first-principles density functional methods and linearized Boltzmann transport equations (LBTE) are employed using both direct and relaxation time based approach (RTA) and compared with that of the phenomenological Slack model. The amorphous phase experimental data has been described using the minimal thermal conductivity model with sufficient precision. The theoretical estimation involving direct solution and RTA method are found to retrieve well the trend of the experimental thermal conductivity for crystalline GeTe at high temperatures despite being slightly overestimated and underestimated, respectively, compared to the experimental data. A rough estimate of vacancy contribution has been found to modify the direct solution in such a way that it agrees excellently with the experiment. Umklapp scattering has been determined as the significant phonon-phonon scattering process. Umklapp scattering parameter has been identified for GeTe for the whole temperature range which can uniquely determine and compare Umklapp scattering processes for different materials

Experimental Evidence for Non-Purely Electric Field-Induced Threshold Switching and Modified Thermal-Assisted Model in GeTe Phase Change Material

Investigation of GeTe/Ge2Sb2Te5 Nanocomposite Multilayer Films for Phase-Change Memory Applications

Phase-Change Characteristics and Thermal Stability of GeTe/Sb<sub>2</sub>Te<sub>3</sub>Nanocomposite Multilayer Films

Investigation of thermal stability and crystallization mechanism of Er-0.03(GeTe)(0.97) phase change material

Thickness Dependence and Crystallization Properties of Amorphous GeTe Thin Films on Silicon Dioxide

Phase-Change Characteristics And Thermal Stability Of Gete/Sb2te3 Nanocomposite Multilayer Films

Ta-doped Ge5Sb95 Phase Change Thin Films for High Speed and Low Power Application

Investigation of thermal stability and crystallization mechanism of Er<sub>0.03</sub>(GeTe)<sub>0.97</sub> phase change material

The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Electrode area dependent switching behavior of Ge2Sb2Se4Te1 phase change material driven by narrow voltage pulse

A Novel Gete Thin-Film Indirect-Heated Phase-Change Switch

Ovonic Threshold Switching Induced by Reversal of Peierls-Like Distortion in GeSe2 Glass

Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch

Insight into the Role of Oxygen in the Phase-Change Material GeTe

Study on Resistance of Crystalline GeTe Thin Films and Enhancement on Electrical Properties of Phase Change Switch

Conductive Atomic Force Microscopy (C-AFM) Observation of Conducting Nanofilaments Formation in GeSbTe Phase Change Materials

Ovonic threshold switching behavior of Te-Ge-Se-Sc (TGSS): A rare-earth doped phase-change material

Thermal conductivity of amorphous and crystalline GeTe thin film at high temperature: Experimental and theoretical study

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Intensive Structural Disorder Induces Electronic Delocalization: Amorphous Solid‐Liquid Transition in Ovonic Threshold Switching Materials