A High-performance and Calibration-free True Random Number Generator Based on the Resistance Perturbation in RRAM Array

Bohan Lin,Bin Gao,Yachuan Pang,Wenqiang Zhang,Jianshi Tang,He Qian,Huaqiang Wu
DOI: https://doi.org/10.1109/iedm13553.2020.9371891
2020-01-01
Abstract:A calibration-free and parallel-friendly RRAM TRNG utilizing the resistance perturbation is demonstrated and modeled for the first time. 128-parallel-output is experimentally demonstrated on a RRAM array, achieving the highest throughput of 230 Mbps. The switching asymmetry and nonlinearity of RRAM is fully utilized to enable the resistance to fluctuate in a stable range spontaneously. This unique calibration-free feature contributes to high entropy and excellent statistical randomness, which are verified by the NIST SP800-90B and NIST SP800-22 tests, respectively. Excellent reliability is also demonstrated under extreme temperatures ranging from -40°C to 125°C, 10% variation in the operating voltage, and continuous working. Finally, this high-performance TRNG is used to successfully implement a stochastic computing system for handwritten digits recognition, demonstrating the feasibility for edge computing application as well as low-weight and low-cost IoT applications.
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