Amorphous Indium–gallium–zinc–oxide Memristor Arrays for Parallel True Random Number Generators

Huiwu Mao,Yixin Zhu,Ying Zhu,Baocheng Peng,Chunsheng Chen,Li Zhu,Shuo Ke,Xiangjing Wang,Changjin Wan,Qing Wan

DOI: https://doi.org/10.1063/5.0131981

IF: 4

2023-01-01

Applied Physics Letters

Abstract:True random number generators (TRNGs) can generate unpredictable binary bitstream by exploiting the intrinsic stochasticity in physical variables. In a threshold switching memristor, the stochastic forming/rupture of conducting pathway has been proved to be a good random source, while further improvement of high randomness and throughput is still a challenge. Here, a crossbar array of amorphous indium–gallium–zinc–oxide (a-IGZO)-based threshold switching memristors was designed for high-throughput TRNGs. The intrinsic stochasticity of Ag conductive filament in IGZO memristor and the stochastic sneak paths in the crossbar array are the two sources of randomness in our TRNGs. In our design, one input pulse train can produce multi-channel random bits, which enables a high scalability for such TRNGs. In addition, the average energy consumption of the TRNGs can be further reduced by increasing the integration scale of the memristors. Such IGZO-based TRNGs are of great significance for security applications.