Abstract:Wireless Power Transfer (WPT) technology, particularly in the megahertz (MHz) frequency range, has undergone significant advancements, such as enhanced power transfer efficiency and reduced component size. Gallium nitride high electron mobility transistors (GaN HEMTs) are particularly advantageous for MHz applications due to their superior electrical properties. To further enhance efficiency in WPT systems, synchronous rectification (SR) is employed, which requires precise synchronization control. This paper introduces a novel drain-source voltage sensing (DVS) based body-diode-conduction (BDC) extraction circuit, along with an adaptive synchronization and dead-time control (ASDTC) method. The BDC circuit accurately differentiates between the conduction states of the body diode and the GaN device. And the resulting signal is processed by an FPGA to generate appropriate driving signals for controlling the GaN device’s turn-on and turn-off. This adaptive control system ensures critical Zero Voltage Switching (ZVS) turn-on and Zero Current Switching (ZCS) turn-off. The proposed method has been validated through simulation and experimental prototype of a 6.78 MHz GaN-based full-bridge WPT system, demonstrating its effectiveness in achieving optimal SR operation with critical-ZVS turn-on and critical -ZCS turn-off.

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