Growth, stability and morphology evolution of Pb films on Si(1 1 1) prepared at low temperature

Yan-Feng Zhang,Jin-Feng Jia,Zhe Tang,Tie-Zhu Han,Xu-Cun Ma,Qi-Kun Xue
DOI: https://doi.org/10.1016/j.susc.2005.09.006
IF: 1.9
2005-01-01
Surface Science
Abstract:Room temperature morphology evolution of Pb thin films, prepared on the Si(111)-7×7 substrate at a low temperature (145K), is investigated by reflection high energy electron diffraction, scanning tunnelling microscopy and angle-resolved photoemission spectroscopy. A critical thickness of 10 monolayers (ML) is identified, below which all the flat films formed at low temperature are unstable against evolution into interconnected islands at room temperature. From 10ML to 21ML, Pb films become stable at room temperature and grow via a bi-layer mode. Above 21ML, the film growth turns into a layer-by-layer mode. A “beating effect” is observed to modulate this special growth mode, which changes the film stability from even (odd) layers to odd (even) layers with a 9ML period. Morphology and electronic structure analysis show that the quantum size effect is responsible for the different morphology evolution behaviour and the magic stability of Pb films.
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