Abstract:We have measured the electronic structure of thin Pb films grown on highly oriented pyrolytic graphite (HOPG) by angle-resolved photoemission spectroscopy. Quantum well states (QWSs) corresponding to confined Pb valence electrons are observed. Their energy positions are fixed, but their intensities evolve for increasing Pb coverages. The results indicate that the films are rough, consisting of multiple thicknesses. Nevertheless, the thickness distribution is sufficiently narrow to allow a unique assignment for each QWS peak in terms of a quantum number and the exact film thickness in atomic layers. For increasing Pb coverages of up to 10 monolayers (ML), the even film thicknesses of 2, 4, 6, 8, and 10 ML are much more prevalent than the odd film thicknesses of 1, 3, 5, 7, and 9 ML, thus suggesting significant differences in surface energy between the even and odd thicknesses. These results are consistent with an available first-principles calculation of the surface energies of freestanding films; an implication is that the interaction between the Pb film and the HOPG substrate is weak. The in-plane dispersion relations of the QWSs are measured. The effective masses at the surface zone center agree well with the results calculated from the bulk Pb band structure, in sharp contrast to the strongly enhanced or anomalous effective masses in Pb films grown on Si(111) as reported previously. This finding indicates that the anomalous effective masses in Pb/Si(111) are not caused by increased electron correlation effects in a confined geometry, but are rather attributable to a strong interfacial interaction between the QWSs and the substrate electronic structure.

Band Structure and Oscillatory Electron-Phonon Coupling of Pb Thin Films Determined by Atomic-Layer-Resolved Quantum-Well States

Oscillatory Electron Phonon Coupling in Pb/Si(111) Deduced by Temperature-Dependent Quantum Well States

Quantized Electronic Structure and Growth of Pb Films on Highly Oriented Pyrolytic Graphite

Band Structure and Fermi Surface of Atomically Uniform Lead Films

Quantum Oscillations in Pb/Si (111) Heterostructure System

Oscillatory Thermal Expansion of Pb Thin Films Modulated by Quantum Size Effects

Atomic-layer-resolved Local Work Functions of Pb Thin Films and Their Dependence on Quantum Well States

Abnormal Raman Spectra of PbTe Crystalline Thin Films Grown by Molecular Beam Epitaxy

Growth, stability and morphology evolution of Pb films on Si(1 1 1) prepared at low temperature

Growth, Stability and Morphology Evolution of Pb Films on Si(111) Prepared at Low Temperature

Electronic Band Structure of Epitaxial PbTe (111) Thin Films Observed by Angle-Resolved Photoemission Spectroscopy

Quantum Size Effects Induced Novel Properties in Two-Dimensional Electronic Systems: Pb Thin Films on Si(111)

GROWTH AND STABILITY OF ULTRA-THIN Pb FILMS ON Pb/Si(111)-α-√3 × √3

Scanning tunneling microscopy study of epitaxial growth of PbSe thin film on BaF2(111)

Van Hove Singularities As a Result of Quantum Confinement: the Origin of Intriguing Physical Properties in Pb Thin Films

Surface Morphologies of Pb Thin Films on Si(111)

Experimental Determination of Deformation Potentials and Band Nonparabolicity Parameters for PbSe

Strong band kinks in magic-thickness Yb films arising from interfacial electron-phonon coupling

Using Electronic Coherence to Probe a Deeply Embedded Quantum Well in Bimetallic Pb/Ag Films on Si(111).

Observation of Phonon Modes in Epitaxial PbTe Films Grown by Molecular Beam Epitaxy

X-ray Diffraction Studies of Trilayer Oscillations in the Preferred Thickness of in Films on Si(111)