Oscillatory Electron Phonon Coupling in Pb/Si(111) Deduced by Temperature-Dependent Quantum Well States

YF Zhang,JF Jia,TZ Han,Z Tang,QT Shen,Y Guo,QK Xue
DOI: https://doi.org/10.1088/1009-1963/14/9/041
2005-01-01
Abstract:Photoemission study of atomically flat Pb films with a thickness from 15 to 24 monolayers (ML) have been performed within a temperature range 75-270K. Well-defined quantum well states (QWSs) are observed, which exhibit interesting temperature-dependent behaviours. The peak position of the QWSs shifts towards higher binding energy with increasing substrate temperature, whereas the peak width broadens linearly due to enhanced electron-phonon coupling strength (lambda). An oscillatory lambda with a period of 2ML is deduced. Preliminary analysis shows that the oscillation can be explained in terms of the interface induced phase variations, and is thus a manifestation of the quantum size effects.
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