Modulation Of Surface Reactivity Via Electron Confinement In Metal Quantum Well Films: O-2 Adsorption On Pb/Si(111)

Zhen Zhang,Yanfeng Zhang,Qiang Fu,Hui Zhang,Yunxi Yao,Teng Ma,Dali Tan,Qikun Xue,Xinhe Bao
DOI: https://doi.org/10.1063/1.2919992
IF: 4.304
2008-01-01
The Journal of Chemical Physics
Abstract:Pb quantum well films with atomic-scale uniformity in thickness over macroscopic areas were prepared on Si(111)-7x7 surfaces. As a probe molecule, O-2 was used to explore the effect of electron confinement in the metal films on the surface reactivity. X-ray photoelectron spectroscopy results showed clear oscillations of oxygen adsorption and Pb oxidation with the thickness of the Pb films. The higher reactivity to O-2 on the films with 23 and 25 ML Pb has been attributed to their highest occupied quantum well states being close to the Fermi level (E-F) and the high density of the electron states at E-F (DOS-E-F), as evidenced by the corresponding ultraviolet photoelectron spectroscopy. A dominant role of DOS-E-F was suggested to explain the quantum modulation of surface reactivity in metal quantum well films. (C) 2008 American Institute of Physics.
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